| Literature DB >> 27666869 |
Suyun Tian1,2, Jing Sun2, Siwei Yang2, Peng He2, Gang Wang2, Zengfeng Di2, Guqiao Ding2,3, Xiaoming Xie1,2, Mianheng Jiang1,2.
Abstract
Despite significant progresses made on mass producEntities:
Year: 2016 PMID: 27666869 PMCID: PMC5036305 DOI: 10.1038/srep34127
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Bubbling exfoliation of edge oxidized graphite for water soluble graphene.
(a) Schematic diagram of preparation process. Left: oxidation at graphite edges; middle: bubbling and exfoliation; right: dispersion. (b) Raman I/I mapping image on a 50 μm × 50 μm graphite, showing most defects located around the edges. (c) SEM image of an edge oxidized graphite. (d) Digital photographs of bubbling process of 0.5 g precursor in 80 mL bubbling reagent for 0, 5 and 15 min, respectively. (e) Digital photographs of 20 L, 2.5 mg mL−1 graphene aqueous solution prepared through the bubbling exfoliation. Scale bar, 10 μm (c).
Figure 2Characterization of graphene.
(a) TEM and (b) local enlarged HR-TEM image of a graphene sheet. (c) SAED diffraction pattern of graphene membrane in (b). (d) Raman spectra on the edge and middle of a graphene sheet. (e) AFM image and height profile of graphene deposited on the SiO2 substrate. The thickness was ~1.3 and 3 nm. (f) Thickness distribution of water soluble graphene. Scale bar, 100 nm (a) and 2 μm (e).
Figure 3Applications of water soluble graphene thus formed.
(a) IDS-VG curve of water soluble graphene transistors at VD = 150 mV, the insert shows the schematic diagram and SEM image of the FET device. (b) The electron and hole mobility statistics of graphene based FET in previous reports (black circles: based on reduced graphene oxide, red circles: based on CVD graphene) and this work (red star). Scale bar, 10 μm (a).