| Literature DB >> 27666869 |
Suyun Tian1,2, Jing Sun2, Siwei Yang2, Peng He2, Gang Wang2, Zengfeng Di2, Guqiao Ding2,3, Xiaoming Xie1,2, Mianheng Jiang1,2.
Abstract
Despite significant progresses made on mass production of chemically exfoliated graphene, the quality, cost and environmental friendliness remain major challenges for its market penetration. Here, we present a fast and green exfoliation strategy for large scale production of high quality water dispersible few layer graphene through a controllable edge oxidation and localized gas bubbling process. Mild edge oxidation guarantees that the pristine sp2 lattice is largely intact and the edges are functionalized with hydrophilic groups, giving rise to high conductivity and good water dispersibility at the same time. The aqueous concentration can be as high as 5.0 mg mL-1, which is an order of magnitude higher than previously reports. The water soluble graphene can be directly spray-coated on various substrates, and the back-gated field effect transistor give hole and electron mobility of ~496 and ~676 cm2 V-1 s-1, respectively. These results achieved are expected to expedite various applications of graphene.Entities:
Year: 2016 PMID: 27666869 PMCID: PMC5036305 DOI: 10.1038/srep34127
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Bubbling exfoliation of edge oxidized graphite for water soluble graphene.
(a) Schematic diagram of preparation process. Left: oxidation at graphite edges; middle: bubbling and exfoliation; right: dispersion. (b) Raman I/I mapping image on a 50 μm × 50 μm graphite, showing most defects located around the edges. (c) SEM image of an edge oxidized graphite. (d) Digital photographs of bubbling process of 0.5 g precursor in 80 mL bubbling reagent for 0, 5 and 15 min, respectively. (e) Digital photographs of 20 L, 2.5 mg mL−1 graphene aqueous solution prepared through the bubbling exfoliation. Scale bar, 10 μm (c).
Figure 2Characterization of graphene.
(a) TEM and (b) local enlarged HR-TEM image of a graphene sheet. (c) SAED diffraction pattern of graphene membrane in (b). (d) Raman spectra on the edge and middle of a graphene sheet. (e) AFM image and height profile of graphene deposited on the SiO2 substrate. The thickness was ~1.3 and 3 nm. (f) Thickness distribution of water soluble graphene. Scale bar, 100 nm (a) and 2 μm (e).
Figure 3Applications of water soluble graphene thus formed.
(a) IDS-VG curve of water soluble graphene transistors at VD = 150 mV, the insert shows the schematic diagram and SEM image of the FET device. (b) The electron and hole mobility statistics of graphene based FET in previous reports (black circles: based on reduced graphene oxide, red circles: based on CVD graphene) and this work (red star). Scale bar, 10 μm (a).