| Literature DB >> 27653832 |
F García Ferré1, A Mairov2, L Ceseracciu3, Y Serruys4, P Trocellier4, C Baumier5, O Kaïtasov5, R Brescia6, D Gastaldi7, P Vena7, M G Beghi8, L Beck4, K Sridharan2, F Di Fonzo1.
Abstract
The lack of suitable materials solutions stands as a major challenge for the development of advanced nuclear systems. Most issues are related to the simultaneous action of high temperatures, corrosive environments and radiation damage. Oxide nanoceramics are a promising class of materials which may benefit from the radiation tolerance of nanomaterials and the chemical compatibility of ceramics with many highly corrosive environments. Here, using thin films as a model system, we provide new insights into the radiation tolerance of oxide nanoceramics exposed to increasing damage levels at 600 °C -namely 20, 40 and 150 displacements per atom. Specifically, we investigate the evolution of the structural features, the mechanical properties, and the response to impact loading of Al2O3 thin films. Initially, the thin films contain a homogeneous dispersion of nanocrystals in an amorphous matrix. Irradiation induces crystallization of the amorphous phase, followed by grain growth. Crystallization brings along an enhancement of hardness, while grain growth induces softening according to the Hall-Petch effect. During grain growth, the excess mechanical energy is dissipated by twinning. The main energy dissipation mechanisms available upon impact loading are lattice plasticity and localized amorphization. These mechanisms are available in the irradiated material, but not in the as-deposited films.Entities:
Year: 2016 PMID: 27653832 PMCID: PMC5031969 DOI: 10.1038/srep33478
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1BF-TEM micrograph, and high-resolution (HR) close-up (inset) of the nanostructure of the as-deposited Al2O3 thin films showing a homogeneous dispersion of a low volume fraction of randomly-oriented nanocrystalline Al2O3 domains in an amorphous Al2O3 matrix.
Figure 2ADF-STEM micrographs and DPs showing as-deposited (a) and irradiated Al2O3 thin films after 20 dpa (b), 40 dpa (c) and 150 dpa (d) at 600 °C. The coarsening induced by irradiation releases excess free energy due to the interaction between point defects and GBs26.
Figure 3Grain growth in the Al2O3 thin films as a function of total energy injection and displacive radiation damage (a). The grain coarsening is accompanied by the formation of twin boundaries (b), which release accumulated mechanical energy. The presence of a mirror plane in both the HR-TEM micrograph (c) (indicated by arrows), and in the DP inset confirms the twin relationship of the adjacent grains.
Figure 4Effect of radiation-induced grain growth on the mechanical properties of Al2O3 nanoceramic thin films, namely the Young’s modulus E (a), the hardness H (b) and the hardness to Young’s modulus ratio H/E (c). The trend of hardness is well-described by the Hall-Petch effect, due to the increase of grain size with increasing damage exposures.
Figure 5Cross-sectional TEM micrographs of representative nanoimpact imprints on the Al2O3 nanoceramic thin films before (a) and after irradiation up to 20 dpa (b) and 150 dpa (c). No major structural rearrangements are induced by impact loading in the unirradiated samples, as confirmed by the identical SADPs gathered distant from and below the impact imprint (d). The appearance of arcs and rings in the SADPs beneath the impact zones in the irradiated samples is due to energy dissipation through bending of the lattice planes. Another energy dissipation mode present is localized amorphization, which is indicated by arrows in (b,c), and shown in high-resolution in (e,f). The FFT insets in (e,f) confirm that the bright contrast corresponds to the amorphous phase, and that the dark contrast corresponds to the crystalline phase.