| Literature DB >> 27646967 |
Jian Gao1, Young Duck Kim2, Liangbo Liang3,4, Juan Carlos Idrobo4, Phil Chow1, Jiawei Tan1, Baichang Li1, Lu Li5, Bobby G Sumpter4, Toh-Ming Lu3, Vincent Meunier3, James Hone2, Nikhil Koratkar1,5.
Abstract
Large-area "in situ" transition-metal substitution doping for chemical-vapor-deposited semiconducting transition-metal-dichalcogenide monolayers deposited on dielectric substrates is demonstrated. In this approach, the transition-metal substitution is stable and preserves the monolayer's semiconducting nature, along with other attractive characteristics, including direct-bandgap photoluminescence.Entities:
Keywords: band structure; chemical vapor deposition; electronic properties; monolayer transition-metal dichalcogenides; transition-metal doping
Year: 2016 PMID: 27646967 DOI: 10.1002/adma.201601104
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849