Literature DB >> 27636494

Optical Writing of Magnetic Properties by Remanent Photostriction.

V Iurchuk1, D Schick2, J Bran1, D Colson3, A Forget3, D Halley1, A Koc2,4, M Reinhardt2,4, C Kwamen2,4, N A Morley5, M Bargheer2,4, M Viret3, R Gumeniuk6, G Schmerber1, B Doudin1, B Kundys1.   

Abstract

We present an optically induced remanent photostriction in BiFeO_{3}, resulting from the photovoltaic effect, which is used to modify the ferromagnetism of Ni film in a hybrid BiFeO_{3}/Ni structure. The 75% change in coercivity in the Ni film is achieved via optical and nonvolatile control. This photoferromagnetic effect can be reversed by static or ac electric depolarization of BiFeO_{3}. Hence, the strain dependent changes in magnetic properties are written optically, and erased electrically. Light-mediated straintronics is therefore a possible approach for low-power multistate control of magnetic elements relevant for memory and spintronic applications.

Entities:  

Year:  2016        PMID: 27636494     DOI: 10.1103/PhysRevLett.117.107403

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Non-volatile optical switch of resistance in photoferroelectric tunnel junctions.

Authors:  Xiao Long; Huan Tan; Florencio Sánchez; Ignasi Fina; Josep Fontcuberta
Journal:  Nat Commun       Date:  2021-01-15       Impact factor: 14.919

2.  Electro-opto-mechano driven reversible multi-state memory devices based on photocurrent in Bi0.9Eu0.1FeO3/La0.67Sr0.33MnO3/PMN-PT heterostructures.

Authors:  Maocai Wei; Meifeng Liu; Lun Yang; Xiang Li; Yunlong Xie; Xiuzhang Wang; Zijiong Li; Yuling Su; Zhongqiang Hu; Jun-Ming Liu
Journal:  RSC Adv       Date:  2020-04-22       Impact factor: 4.036

  2 in total

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