| Literature DB >> 27627856 |
Yunkun Zhang1, Lailei Wu1, Biao Wan1,2, Yangzheng Lin3, Qingyang Hu2,3, Yan Zhao1, Rui Gao4, Zhiping Li4, Jingwu Zhang1, Huiyang Gou2,4.
Abstract
First-principles calculations were performed to understand the structural stability, synthesis routes, mechanical and electronic properties of diverse ruthenium nitrides. RuN with a new I-4m2 symmetry stabilized by pressure is found to be energetically preferred over the experimental NaCl-type and ZnS-type ones. The Pnnm-RuN2 is found to be stable above 1.1 GPa, in agreement with the experimental results. Specifically, new stoichiometries like RuN3 and RuN4 are proposed firstly to be thermodynamically stable, and the dynamical and mechanical stabilities of the newly predicted structures have been verified by checking their phonon spectra and elastic constants. A phase transition from P4/mmm-RuN4 to C2/c-RuN4 is also uncovered at 23.0 GPa. Drawn from bonding and band structure analysis, P4/mmm-RuN4 exhibits semi-metal-like behavior and becomes a semiconductor for the high-pressure C2/c-RuN4 phase. Meanwhile the P21/c-RuN3 shows metallic feature. Highly directional covalent N-N and Ru-N bonds are formed and dominating in N-enriched Ru nitrides, making them promising hard materials.Entities:
Year: 2016 PMID: 27627856 PMCID: PMC5024155 DOI: 10.1038/srep33506
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Formation enthalpies (∆H) of the structures of N-rich Ru-N binary compounds at pressures of (a) 0 GPa, (b) 10 GPa, (c) 20 GPa and (d) 30 GPa. The convex hulls connecting stable phases (solid circles) are shown by solid lines. Unstable/metastable phases are shown by open circles.
Figure 2(a,b) Formation enthalpies of RuN and RuN2 with respect to Ru and nitrogen as a function of pressure, respectively. (c,d) Relative formation enthalpies of RuN3 and RuN4 with respect to Pnnm-RuN2 and nitrogen as a function of pressure, respectively.
Figure 3Crystal structures of Ru nitrides.
(a) I-4m2-RuN with wyckoff position Ru (2d) (0, 0.5, 0.75) and N (2a) (0, 0, 0). (b) R-3m-RuN with wyckoff position Ru (6c) (0, 0, 0.2322) and N (6c) (0, 0, 0.0374). (c) Pnnm-RuN2 with wyckoff position Ru (2a) (0, 0, 0) and N (4g) (0.1236, 0.4058, 0). (d) P21/c-RuN3 with wyckoff position Ru1 (4e) (0.5011, 0.1336, 0.1479), Ru2 (4e) (0.0313, 0.6289, 0.8824), N1 (4e) (0.6973, 0.3548, 0.1936), N2 (4e) (0.2439, 0.2475, 0.1333), N3 (4e) (0.3172, 0.9829, 0.1262), N4 (4e) (0.8148, 0.8595, 0.8150), N5 (4e) (0.2560, 0.7440, 0.8680) and N6 (4e) (0.1891, 0.4645, 0.8779). (e) P4/mmm-RuN4 with wyckoff position Ru (1c) (0.5, 0.5, 0) and N (4i) (0, 0.5, 0.3279). (f) C2/c-RuN4 with wyckoff position Ru (4e) (0, 0.0915, 0.25), N1 (8f) (0.2863, 0.0884, 0.6852) and N2 (8f) (0.3372, 0.2646, 0.2598). (g) Cmmm-RuN4 with wyckoff position Ru (2b) (0, 0.5, 0) and N (8q) (0.1606, 0.1930, 0.5). The Ru and N atoms are represented as big orange and small purple spheres, respectively.
Calculated equilibrium lattice parameters, a, b and c (Å), β (deg.); formation enthalpies ΔH (eV/atom) of Ru nitrides at 0 GPa.
| S. G. (No.) | Ref. | ||||||
|---|---|---|---|---|---|---|---|
| RuN | 3.068 | 4.929 | 0.008 | ||||
| 2.835 | 18.220 | 0.078 | |||||
| RuN2 | 4.115 | 4.910 | 2.689 | 0.062 | |||
| 4.073 | 4.888 | 2.707 | Exp | ||||
| 4.058 | 4.847 | 2.665 | Cal | ||||
| 4.098 | 4.919 | 2.696 | Cal | ||||
| RuN3 | 11.925 | 4.070 | 13.032 | 154.12 | 0.211 | ||
| RuN4 | 3.6135 | 3.6137 | 0.263 | ||||
| 3.834 | 8.888 | 5.720 | 117.83 | 0.355 | |||
| 7.629 | 3.669 | 2.867 | 0.646 |
Calculated elastic constants C (GPa), bulk modulus B (GPa), shear modulus G (GPa), B/G ratio, Poisson’s ratio ν, and Vickers hardness Hv (GPa) of Ru nitrides.
| S. G. | |||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RuN | 371 | 305 | 99 | 37 | 177 | 234 | 260 | 66 | 3.94 | 0.38 | — | ||||
| 406 | 530 | 87 | 205 | 173 | 271 | 105 | 2.58 | 0.33 | — | ||||||
| RuN2 | 615 | 769 | 464 | 106 | 269 | 132 | 152 | 218 | 71 | 298 | 180 | 1.66 | 0.25 | 20.1 | |
| RuN3 | 367 | 473 | 639 | 188 | 186 | 201 | 183 | 127 | 127 | 253 | 174 | 1.45 | 0.22 | 23.4 | |
| RuN4 | 283 | 698 | 104 | 129 | 112 | 38 | 174 | 128 | 1.36 | 0.20 | 20.9 | ||||
| 540 | 664 | 344 | 151 | 208 | 286 | 199 | 172 | 97 | 257 | 171 | 1.50 | 0.23 | 22.1 | ||
| C | 738 | 496 | 374 | 61 | 73 | 257 | 132 | 184 | 135 | 269 | 133 | 2.02 | 0.29 | 12.3 |
Figure 4Calculated total and partial density of states for Ru nitrides.
(a) I-4m2-RuN; (b) R-3m-RuN (c) Pnnm-RuN2; (d) P21/c-RuN3; (e) P4/mmm-RuN4; (f) C2/c-RuN4 and (g) Cmmm-RuN4. The vertical dash line at zero is the Fermi energy level.
Figure 5Band structure of (a) P4/mmm-RuN4; (b) C2/c-RuN4 and (c) Cmmm-RuN4. The P4/mmm-RuN4 and Cmmm-RuN4 have semimetallic feature, and C2/c-RuN4 is a semiconductor with an indirect band gap of 0.84 eV.
Figure 6Calculated valence electron density distributions of Ru nitrides.
(a) I-4m2-RuN in (100) plane; (b) R-3m-RuN in (110) plane; (c) Pnnm-RuN2 in (001) plane; (d) P21/c-RuN3 in (101) plane; (e) P4/mmm-RuN4 in (010) plane; (f) C2/c-RuN4 in (001) plane and (g) Cmmm-RuN4 in (001) plane. The big orange and small purple spheres represent Ru and N atoms, respectively.