Literature DB >> 27619888

Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2 /MoS2 Heterostructure for Ambipolar Field-Effect Transistors.

Inyeal Lee1, Servin Rathi1, Dongsuk Lim1, Lijun Li1, Jinwoo Park1, Yoontae Lee1, Kyung Soo Yi2, Krishna P Dhakal3, Jeongyong Kim3, Changgu Lee4, Gwan-Hyoung Lee5, Young Duck Kim6, James Hone6, Sun Jin Yun7, Doo-Hyeb Youn7, Gil-Ho Kim1.   

Abstract

An ambipolar dual-channel field-effect transistor (FET) with a WSe2 /MoS2 heterostructure formed by separately controlled individual channel layers is demonstrated. The FET shows a switchable ambipolar behavior with independent carrier transport of electrons and holes in the individual layers of MoS2 and WSe2 , respectively. Moreover, the photoresponse is studied at the heterointerface of the WSe2 /MoS2 dual-channel FET.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords:  MoS2; WSe2; dual-channel; heterostructures; photoresponse

Year:  2016        PMID： 27619888     DOI： 10.1002/adma.201601949

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  2 in total

1.  Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2 /MoTe2 Heterostructures.

Authors:  Jihoon Kim; A Venkatesan; Hanul Kim; Yewon Kim; Dongmok Whang; Gil-Ho Kim
Journal:  Adv Sci (Weinh)       Date:  2021-03-15       Impact factor: 16.806

Review 2.  Miniaturization of CMOS.

Authors:  Henry H Radamson; Xiaobin He; Qingzhu Zhang; Jinbiao Liu; Hushan Cui; Jinjuan Xiang; Zhenzhen Kong; Wenjuan Xiong; Junjie Li; Jianfeng Gao; Hong Yang; Shihai Gu; Xuewei Zhao; Yong Du; Jiahan Yu; Guilei Wang
Journal:  Micromachines (Basel)       Date:  2019-04-30       Impact factor: 2.891
  2 in total

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