Literature DB >> 27610882

Phonon-Photon Mapping in a Color Center in Hexagonal Boron Nitride.

T Q P Vuong1, G Cassabois1, P Valvin1, A Ouerghi2, Y Chassagneux3, C Voisin3, B Gil1.   

Abstract

We report on the ultraviolet optical response of a color center in hexagonal boron nitride. We demonstrate a mapping between the vibronic spectrum of the color center and the phonon dispersion in hexagonal boron nitride, with a striking suppression of the phonon assisted emission signal at the energy of the phonon gap. By means of nonperturbative calculations of the electron-phonon interaction in a strongly anisotropic phonon dispersion, we reach a quantitative interpretation of the acoustic phonon sidebands from cryogenic temperatures up to room temperature. Our analysis provides an original method for estimating the spatial extension of the electronic wave function in a point defect.

Entities:  

Year:  2016        PMID: 27610882     DOI: 10.1103/PhysRevLett.117.097402

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  5 in total

1.  Stimulated Emission Depletion Spectroscopy of Color Centers in Hexagonal Boron Nitride.

Authors:  Ralph Nicholas Edward Malein; Prince Khatri; Andrew J Ramsay; Isaac J Luxmoore
Journal:  ACS Photonics       Date:  2021-04-07       Impact factor: 7.529

2.  Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE.

Authors:  Xin Li; Matthew B Jordan; Taha Ayari; Suresh Sundaram; Youssef El Gmili; Saiful Alam; Muhbub Alam; Gilles Patriarche; Paul L Voss; Jean Paul Salvestrini; Abdallah Ougazzaden
Journal:  Sci Rep       Date:  2017-04-11       Impact factor: 4.379

3.  Antisite defect qubits in monolayer transition metal dichalcogenides.

Authors:  Jeng-Yuan Tsai; Jinbo Pan; Hsin Lin; Arun Bansil; Qimin Yan
Journal:  Nat Commun       Date:  2022-01-25       Impact factor: 17.694

4.  Ultraviolet Quantum Emitters in Hexagonal Boron Nitride from Carbon Clusters.

Authors:  Song Li; Anton Pershin; Gergő Thiering; Péter Udvarhelyi; Adam Gali
Journal:  J Phys Chem Lett       Date:  2022-04-01       Impact factor: 6.888

5.  Enhanced excitonic emission efficiency in porous GaN.

Authors:  Thi Huong Ngo; Bernard Gil; Tatiana V Shubina; Benjamin Damilano; Stéphane Vezian; Pierre Valvin; Jean Massies
Journal:  Sci Rep       Date:  2018-10-25       Impact factor: 4.379

  5 in total

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