| Literature DB >> 27605061 |
Toshinori Matsushima1,2, Sunbin Hwang1, Atula S D Sandanayaka1,2, Chuanjiang Qin1,2, Shinobu Terakawa1, Takashi Fujihara3, Masayuki Yahiro3, Chihaya Adachi1,2,4.
Abstract
A very high hole mobility of 15 cm2 V-1 s-1 along with negligible hysteresis are demonstrated in transistors with an organic-inorganic perovskite semiconductor. This high mobility results from the well-developed perovskite crystallites, improved conversion to perovskite, reduced hole trap density, and improved hole injection by employing a top-contact/top-gate structure with surface treatment and MoOx hole-injection layers.Entities:
Keywords: field-effect transistors; hole mobility; hysteresis; organic-inorganic perovskites; surface treatment
Year: 2016 PMID： 27605061 DOI： 10.1002/adma.201603126
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849