| Literature DB >> 27594417 |
Bingchao Yang1, Bensong Wan2,3, Qionghua Zhou4, Yue Wang5, Wentao Hu1, Weiming Lv1,2, Qian Chen4, Zhongming Zeng2, Fusheng Wen1, Jianyong Xiang1, Shijun Yuan4, Jinlan Wang4, Baoshun Zhang2, Wenhong Wang5, Junying Zhang3, Bo Xu1, Zhisheng Zhao1, Yongjun Tian1, Zhongyuan Liu1.
Abstract
Element doping allows manipulation of the electronic properties of 2D materials. Enhanced transport performances and ambient stability of black-phosphorus devices by Te doping are presented. This provides a facile route for achieving airstable black-phosphorus devices.Entities:
Keywords: 2D layered materials; Te-doping; black phosphorus; field-effect transistors
Year: 2016 PMID: 27594417 DOI: 10.1002/adma.201603723
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849