| Literature DB >> 27573443 |
Zhiyong Qiu1,2, Jia Li3, Dazhi Hou1,2, Elke Arenholz4, Alpha T N'Diaye4, Ali Tan3, Ken-Ichi Uchida5,6, Koji Sato1, Satoshi Okamoto7, Yaroslav Tserkovnyak8, Z Q Qiu3, Eiji Saitoh1,2,5,9.
Abstract
Spin fluctuation and transition have always been one of the central topics of magnetism and condensed matter science. Experimentally, the spin fluctuation is found transcribed onto scattering intensity in the neutron-scattering process, which is represented by dynamical magnetic susceptibility and maximized at phase transitions. Importantly, a neutron carries spin without electric charge, and therefore it can bring spin into a sample without being disturbed by electric energy. However, large facilities such as a nuclear reactor are necessary. Here we show that spin pumping, frequently used in nanoscale spintronic devices, provides a desktop microprobe for spin transition; spin current is a flux of spin without an electric charge and its transport reflects spin excitation. We demonstrate detection of antiferromagnetic transition in ultra-thin CoO films via frequency-dependent spin-current transmission measurements, which provides a versatile probe for phase transition in an electric manner in minute devices.Entities:
Year: 2016 PMID: 27573443 PMCID: PMC5013713 DOI: 10.1038/ncomms12670
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919
Figure 1Concept and sample set-up.
(a) Inelastic scattering of polarized neutrons through an antiferromagnetic system. (b) Spin-current transmission through an antiferromagnetic system. (c) Experimental set-up of the spin-pumping measurement for the Y3Fe5O12/CoO/Pt trilayer device. Js denotes spin current injected from the Y3Fe5O12 layer into the Pt layer through the CoO layer by spin pumping, which is detected as a voltage signal via the inverse spin Hall effect in the Pt layer. (d) A cross-sectional TEM image of a Y3Fe5O12/CoO/Pt trilayer device. Scale bar, 10 nm. (e). A Co 2p XPS spectrum and Gaussian fitting analysis for the CoO layer in the Y3Fe5O12/CoO/Pt trilayer device. TEM, transmission electron microscopy; XPS, X-ray photoemission spectroscopy.
Figure 2Spin-pumping detection of antiferromagnetic transition.
(a) Magnetic field (H) dependence of microwave absorption power (P) for a Y3Fe5O12 film (3 μm in thickness) at various temperatures. Pab denotes absorption power at FMR field. (b) Magnetic field (H) dependence of electric voltage (V) generated in the Y3Fe5O12 (3 μm)/Pt (10 nm) bilayer film at various temperatures. (c) Magnetic field (H) dependence of electric voltage (V) generated in the Y3Fe5O12 (3 μm)/CoO (6 nm)/Pt (10 nm) trilayer film at various temperatures. VISHE denotes the voltage signal at the FMR field. (d) Temperature dependence of VISHE for the Y3Fe5O12 (6 μm)/Pt (10 nm) bilayer film. (e) Temperature dependence of VISHE for the Y3Fe5O12 (3 μm)/CoO (6 nm)/Pt (10 nm) trilayer film. The inset shows the theoretical prediction of the spin conductance versus temperature in an antiferromagnetic system with S=1/2 (ref. 38). Coefficient D denotes the spin conductance at a given frequency scaled by its maximum value Dmax. (f) Temperature dependence of the XMLD signal ΔRL3 for the Y3Fe5O12 (3 μm)/CoO (6 nm)/Pt (1 nm) trilayer film (details are shown in Supplementary Note 1). The error bars in d–f represent the s.d. of multiple measurements at the same condition. XMLD, X-ray magnetic linear dichroism.
Figure 3Temperature dependence of spin-pumping signals in different systems.
(a) Temperature dependence of VISHE for Y3Fe5O12/CoO/Pt trilayer films with different CoO-layer thicknesses (dCoO=3, 6 and 10 nm). (b) Temperature dependence of VISHE for a Y3Fe5O12/NiO(1.5 nm)/Pt film. The dash lines in a,b denote the peak positions.
Figure 4Frequency dependence of spin-pumping signals in Y3Fe5O12/CoO/Pt.
(a) A pseudo-colour plot of VISHE/Pab as a function of the temperature T and the microwave frequency f for the Y3Fe5O12 (3 μm)/CoO (3 nm)/Pt (10 nm) trilayer film. (b) Temperature (T) dependence of VISHE/Pab at various exciting microwave frequencies. (c) Exciting microwave frequency (f) dependence of VISHE/Pab at various temperatures. We did not show the data for frequencies lower than 4 GHz because the magnetization precession can be modulated due to the three-magnon interaction when f<4 GHz (ref. 40).