| Literature DB >> 27571382 |
Donghee Son1,2, Sue In Chae1,2, Myungbin Kim1,2, Moon Kee Choi1,2, Jiwoong Yang1,2, Kunsu Park1,2, Vinayak S Kale1,2, Ja Hoon Koo1,2,3, Changsoon Choi1,2, Minbaek Lee4, Ji Hoon Kim5, Taeghwan Hyeon1,2, Dae-Hyeong Kim1,2.
Abstract
Large-scale colloidal synthesis and integration of uniform-sized molybdenum disulfide (MoS2 ) nanosheets for a flexible resistive random access memory (RRAM) array are presented. RRAM using MoS2 nanosheets shows a ≈10 000 times higher on/off ratio than that based on exfoliated MoS2 . The good uniformity of the MoS2 nanosheets allows wafer-scale system integration of the RRAM array with pressure sensors and quantum-dot light-emitting diodes.Entities:
Keywords: MoS2 nanosheets; colloidal synthesis; flexible electronics; resistive random access memory
Year: 2016 PMID: 27571382 DOI: 10.1002/adma.201602391
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849