Literature DB >> 27562539

Multibit MoS2 Photoelectronic Memory with Ultrahigh Sensitivity.

Dain Lee1, Euyheon Hwang1,2, Youngbin Lee1, Yongsuk Choi1, Jong Su Kim1, Seungwoo Lee1,3, Jeong Ho Cho4,5.   

Abstract

A novel multibit MoS2 photoelectronic nonvolatile memory device is developed by synergistically combining rational device designs and the efficient transfer of large-area MoS2 flakes. The MoS2 photoelectronic memory exhibits excellent memory characteristics, including a large programming/erasing current ratio that exceeds 107 , multilevel data storage of 3 bits (corresponding to eight levels), performance stability over 200 cycles, and stable data retention over 104 s.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords:  MoS2; memory devices, floating gates; multilevel programs; nonvolatile photoelectronic memory

Year:  2016        PMID： 27562539     DOI： 10.1002/adma.201603571

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  13 in total

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2.  All-Optical Reconfigurable Electronic Memory in a Graphene/SrTiO3 Heterostructure.

Authors:  Liyun Qin; Qinliang Li; Shiteng Wu; Jianyu Wang; Zhendong Wang; Li Wang; Qisheng Wang
Journal:  ACS Omega       Date:  2022-04-26

3.  Two-dimensional multibit optoelectronic memory with broadband spectrum distinction.

Authors:  Du Xiang; Tao Liu; Jilian Xu; Jun Y Tan; Zehua Hu; Bo Lei; Yue Zheng; Jing Wu; A H Castro Neto; Lei Liu; Wei Chen
Journal:  Nat Commun       Date:  2018-07-27       Impact factor: 14.919

4.  Memory phototransistors based on exponential-association photoelectric conversion law.

Authors:  Zhibin Shao; Tianhao Jiang; Xiujuan Zhang; Xiaohong Zhang; Xiaofeng Wu; Feifei Xia; Shiyun Xiong; Shuit-Tong Lee; Jiansheng Jie
Journal:  Nat Commun       Date:  2019-03-20       Impact factor: 14.919

5.  Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices.

Authors:  Lei Yin; Peng He; Ruiqing Cheng; Feng Wang; Fengmei Wang; Zhenxing Wang; Yao Wen; Jun He
Journal:  Nat Commun       Date:  2019-09-12       Impact factor: 14.919

6.  Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation.

Authors:  Tian-Yu Wang; Jia-Lin Meng; Zhen-Yu He; Lin Chen; Hao Zhu; Qing-Qing Sun; Shi-Jin Ding; Peng Zhou; David Wei Zhang
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Review 7.  Triboelectric Nanogenerators as Active Tactile Stimulators for Multifunctional Sensing and Artificial Synapses.

Authors:  Jianhua Zeng; Junqing Zhao; Chengxi Li; Youchao Qi; Guoxu Liu; Xianpeng Fu; Han Zhou; Chi Zhang
Journal:  Sensors (Basel)       Date:  2022-01-27       Impact factor: 3.576

8.  Multilevel storage and photoinduced-reset memory by an inorganic perovskite quantum-dot/polystyrene floating-gate organic transistor.

Authors:  Risheng Jin; Jin Wang; Keli Shi; Beibei Qiu; Lanchao Ma; Shihua Huang; Zhengquan Li
Journal:  RSC Adv       Date:  2020-11-27       Impact factor: 4.036

9.  A photon-controlled diode with a new signal-processing behavior.

Authors:  Shun Feng; Ruyue Han; Lili Zhang; Chi Liu; Bo Li; Honglei Zhu; Qianbing Zhu; Wei Chen; Hui-Ming Cheng; Dong-Ming Sun
Journal:  Natl Sci Rev       Date:  2022-05-10       Impact factor: 23.178

10.  A Logic-Memory Transistor with the Integration of Visible Information Sensing-Memory-Processing.

Authors:  Xiang Hou; Chunsen Liu; Yi Ding; Lan Liu; Shuiyuan Wang; Peng Zhou
Journal:  Adv Sci (Weinh)       Date:  2020-09-21       Impact factor: 16.806
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