Enhanced third harmonic generation in a silicon metasurface using trapped mode.

We experimentally demonstrate enhanced third harmonic generation (THG) using a silicon metasurface, which is consist of symmetric spindle-shape nanoparticle array. Relying on the trapped mode supported by the high quality factor all-dielectric metasurface, the conversion efficiency of THG is about 300 times larger than that of bulk silicon slab. The maximum extinction ratio of the intensity of THG reaches about 25 dB by tuning the polarization of incident light. The simulation results agree with the experimental performances.