| Literature DB >> 27537619 |
Kleopatra Emmanouil Aretouli1,2, Dimitra Tsoutsou1, Polychronis Tsipas1, Jose Marquez-Velasco1,3, Sigiava Aminalragia Giamini1,2, Nicolaos Kelaidis1, Vassilis Psycharis1, Athanasios Dimoulas1.
Abstract
van der Waals heterostructures of 2D semiconductor materials can be used to realize a number of (opto)electronic devices including tunneling field effect devices (TFETs). It is shown in this work that high quality SnSe2/WSe2 vdW heterostructure can be grown by molecular beam epitaxy on AlN(0001)/Si(111) substrates using a Bi2Se3 buffer layer. A valence band offset of 0.8 eV matches the energy gap of SnSe2 in such a way that the VB edge of WSe2 and the CB edge of SnSe2 are lined up, making this materials combination suitable for (nearly) broken gap TFETs.Entities:
Keywords: 2D semiconductors; SnSe2; WSe2; molecular beam epitaxy; tunneling field effect transistors; van der Waals heterostructures
Year: 2016 PMID： 27537619 DOI： 10.1021/acsami.6b02933
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN： 1944-8244 Impact factor: 9.229