| Literature DB >> 27534806 |
Shaobo Li1, Zhaofeng Wang, Hanmei Jiang, Limei Zhang, Jingzheng Ren, Mingtao Zheng, Lichun Dong, Luyi Sun.
Abstract
In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance.Entities:
Year: 2016 PMID: 27534806 DOI: 10.1039/c6cc04052g
Source DB: PubMed Journal: Chem Commun (Camb) ISSN: 1359-7345 Impact factor: 6.222