| Literature DB >> 27505754 |
Abdullah I Alhassan, Robert M Farrell, Burhan Saifaddin, Asad Mughal, Feng Wu, Steven P DenBaars, Shuji Nakamura, James S Speck.
Abstract
We demonstrate very high luminous efficacy green light-emitting diodes employing Al<sub>0.30</sub>Ga<sub>0.70</sub>N cap layer grown on patterned sapphire substrates by metal organic chemical vapor deposition. The peak external quantum efficiency and luminous efficacies were 44.3% and 239 lm/w, respectively. At 20 mA (20 A/cm<sup>2</sup>) the light output power was 14.3 mW, the forward voltage was 3.5 V, the emission wavelength was 526.6 nm, and the external quantum efficiency was 30.2%. These results are among the highest reported luminous efficacy values for InGaN based green light-emitting diodes.Entities:
Year: 2016 PMID： 27505754 DOI： 10.1364/OE.24.017868
Source DB: PubMed Journal: Opt Express ISSN： 1094-4087 Impact factor: 3.894