| Literature DB >> 27500380 |
Viet Phuong Pham1, Geun Young Yeom2.
Abstract
Owing to their excellent physical properties, atomically thin layers of molybdenum disulfide (MoS2 ) have recently attracted much attention due to their nonzero-gap property, exceptionally high electrical conductivity, good thermal stability, and excellent mechanical strength, etc. MoS2 -based devices exhibit great potential for applications in optoelectronics and energy harvesting. Here, a comprehensive review of various doping strategies is presented, including wet doping and dry doping of atomically crystalline MoS2 thin layers, and the progress made so far for their doping-based prospective applications is also discussed. Finally, several significant research issues for the prospects of doped-MoS2 in industry, as a guide for 2D material community, are also provided.Entities:
Keywords: MoS2; dry doping; industrial applications; possible element doping; wet doping
Year: 2016 PMID: 27500380 DOI: 10.1002/adma.201506402
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849