Literature DB >> 27483492

3D Ta/TaO x /TiO2/Ti synaptic array and linearity tuning of weight update for hardware neural network applications.

I-Ting Wang1, Chih-Cheng Chang, Li-Wen Chiu, Teyuh Chou, Tuo-Hung Hou.   

Abstract

The implementation of highly anticipated hardware neural networks (HNNs) hinges largely on the successful development of a low-power, high-density, and reliable analog electronic synaptic array. In this study, we demonstrate a two-layer Ta/TaO x /TiO2/Ti cross-point synaptic array that emulates the high-density three-dimensional network architecture of human brains. Excellent uniformity and reproducibility among intralayer and interlayer cells were realized. Moreover, at least 50 analog synaptic weight states could be precisely controlled with minimal drifting during a cycling endurance test of 5000 training pulses at an operating voltage of 3 V. We also propose a new state-independent bipolar-pulse-training scheme to improve the linearity of weight updates. The improved linearity considerably enhances the fault tolerance of HNNs, thus improving the training accuracy.

Entities:  

Year:  2016        PMID: 27483492     DOI: 10.1088/0957-4484/27/36/365204

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  11 in total

1.  Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide.

Authors:  Vinod K Sangwan; Hong-Sub Lee; Hadallia Bergeron; Itamar Balla; Megan E Beck; Kan-Sheng Chen; Mark C Hersam
Journal:  Nature       Date:  2018-02-21       Impact factor: 49.962

2.  Quasi-two-dimensional α-molybdenum oxide thin film prepared by magnetron sputtering for neuromorphic computing.

Authors:  Zhenfa Wu; Peng Shi; Ruofei Xing; Yuzhi Xing; Yufeng Ge; Lin Wei; Dong Wang; Le Zhao; Shishen Yan; Yanxue Chen
Journal:  RSC Adv       Date:  2022-06-15       Impact factor: 4.036

3.  Stability-Enhanced Resistive Random-Access Memory via Stacked In x Ga1-x O by the RF Sputtering Method.

Authors:  Wei-Lun Huang; Yong-Zhe Lin; Sheng-Po Chang; Wei-Chih Lai; Shoou-Jinn Chang
Journal:  ACS Omega       Date:  2021-04-13

4.  Impact of Synaptic Device Variations on Pattern Recognition Accuracy in a Hardware Neural Network.

Authors:  Sungho Kim; Meehyun Lim; Yeamin Kim; Hee-Dong Kim; Sung-Jin Choi
Journal:  Sci Rep       Date:  2018-02-08       Impact factor: 4.379

5.  Signal and noise extraction from analog memory elements for neuromorphic computing.

Authors:  N Gong; T Idé; S Kim; I Boybat; A Sebastian; V Narayanan; T Ando
Journal:  Nat Commun       Date:  2018-05-29       Impact factor: 14.919

6.  Rectifying Resistive Memory Devices as Dynamic Complementary Artificial Synapses.

Authors:  Dan Berco
Journal:  Front Neurosci       Date:  2018-10-22       Impact factor: 4.677

7.  A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications.

Authors:  Lu-Rong Gan; Ya-Rong Wang; Lin Chen; Hao Zhu; Qing-Qing Sun
Journal:  Micromachines (Basel)       Date:  2019-08-23       Impact factor: 2.891

8.  Bipolar Analog Memristors as Artificial Synapses for Neuromorphic Computing.

Authors:  Rui Wang; Tuo Shi; Xumeng Zhang; Wei Wang; Jinsong Wei; Jian Lu; Xiaolong Zhao; Zuheng Wu; Rongrong Cao; Shibing Long; Qi Liu; Ming Liu
Journal:  Materials (Basel)       Date:  2018-10-26       Impact factor: 3.623

9.  Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory.

Authors:  Sungjun Kim; Chih-Yang Lin; Min-Hwi Kim; Tae-Hyeon Kim; Hyungjin Kim; Ying-Chen Chen; Yao-Feng Chang; Byung-Gook Park
Journal:  Nanoscale Res Lett       Date:  2018-08-23       Impact factor: 4.703

10.  The Effect of Multi-Layer Stacking Sequence of TiOx Active Layers on the Resistive-Switching Characteristics of Memristor Devices.

Authors:  Minho Kim; Kungsang Yoo; Seong-Pil Jeon; Sung Kyu Park; Yong-Hoon Kim
Journal:  Micromachines (Basel)       Date:  2020-01-30       Impact factor: 2.891

View more

北京卡尤迪生物科技股份有限公司 © 2022-2023.