| Literature DB >> 27456856 |
Md Golam Kibria1, Ruimin Qiao2, Wanli Yang2, Idris Boukahil3, Xianghua Kong4,5, Faqrul Alam Chowdhury1, Michel L Trudeau6, Wei Ji5, Hong Guo4, F J Himpsel7, Lionel Vayssieres8, Zetian Mi9.
Abstract
The atomic-scale origin of the unusually high performance and long-term stability of wurtzite p-GaN oriented nanowire arrays is revealed. Nitrogen termination of both the polar (0001¯) top face and the nonpolar (101¯0) side faces of the nanowires is essential for long-term stability and high efficiency. Such a distinct atomic configuration ensures not only stability against (photo) oxidation in air and in water/electrolyte but, as importantly, also provides the necessary overall reverse crystal polarization needed for efficient hole extraction in p-GaN.Entities:
Keywords: N-terminated surfaces; X-ray spectroscopy; artificial photosynthesis; metal nitride; polarization dependence; wurtzite structure
Year: 2016 PMID: 27456856 DOI: 10.1002/adma.201602274
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849