| Literature DB >> 27434729 |
Michal J Mleczko1, Runjie Lily Xu1, Kye Okabe1, Hsueh-Hui Kuo1, Ian R Fisher1, H-S Philip Wong1, Yoshio Nishi1, Eric Pop1.
Abstract
Two-dimensional (2D) semimetals beyond graphene have been relatively unexplored in the atomically thin limit. Here, we introduce a facile growth mechanism for semimetallic WTe2 crystals and then fabricate few-layer test structures while carefully avoiding degradation from exposure to air. Low-field electrical measurements of 80 nm to 2 μm long devices allow us to separate intrinsic and contact resistance, revealing metallic response in the thinnest encapsulated and stable WTe2 devices studied to date (3-20 layers thick). High-field electrical measurements and electrothermal modeling demonstrate that ultrathin WTe2 can carry remarkably high current density (approaching 50 MA/cm(2), higher than most common interconnect metals) despite a very low thermal conductivity (of the order ∼3 Wm(-1) K(-1)). These results suggest several pathways for air-stable technological viability of this layered semimetal.Entities:
Keywords: current density; environmental stability; semimetals; thermal conductivity; transition metal dichalcogenides; two-dimensional atomic layers
Year: 2016 PMID: 27434729 DOI: 10.1021/acsnano.6b02368
Source DB: PubMed Journal: ACS Nano ISSN: 1936-0851 Impact factor: 15.881