Literature DB >> 27387603

High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer.

Jingli Wang1, Qian Yao2, Chun-Wei Huang3, Xuming Zou1, Lei Liao4, Shanshan Chen2, Zhiyong Fan5, Kai Zhang6, Wei Wu1, Xiangheng Xiao1, Changzhong Jiang1, Wen-Wei Wu3.   

Abstract

High-performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS2 . Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  MoS2; contact resistance; hexagonal boron nitride; tunneling

Year:  2016        PMID： 27387603     DOI： 10.1002/adma.201602757

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  22 in total

1.  Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide.

Authors:  Vinod K Sangwan; Hong-Sub Lee; Hadallia Bergeron; Itamar Balla; Megan E Beck; Kan-Sheng Chen; Mark C Hersam
Journal:  Nature       Date:  2018-02-21       Impact factor: 49.962

2.  Spatial Mapping of Electrostatic Fields in 2D Heterostructures.

Authors:  Akshay A Murthy; Stephanie M Ribet; Teodor K Stanev; Pufan Liu; Kenji Watanabe; Takashi Taniguchi; Nathaniel P Stern; Roberto Dos Reis; Vinayak P Dravid
Journal:  Nano Lett       Date:  2021-08-27       Impact factor: 12.262

3.  Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2 /MoTe2 Heterostructures.

Authors:  Jihoon Kim; A Venkatesan; Hanul Kim; Yewon Kim; Dongmok Whang; Gil-Ho Kim
Journal:  Adv Sci (Weinh)       Date:  2021-03-15       Impact factor: 16.806

4.  Monolayer optical memory cells based on artificial trap-mediated charge storage and release.

Authors:  Juwon Lee; Sangyeon Pak; Young-Woo Lee; Yuljae Cho; John Hong; Paul Giraud; Hyeon Suk Shin; Stephen M Morris; Jung Inn Sohn; SeungNam Cha; Jong Min Kim
Journal:  Nat Commun       Date:  2017-03-24       Impact factor: 14.919

5.  Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor.

Authors:  Xiao-Xi Li; Zhi-Qiang Fan; Pei-Zhi Liu; Mao-Lin Chen; Xin Liu; Chuan-Kun Jia; Dong-Ming Sun; Xiang-Wei Jiang; Zheng Han; Vincent Bouchiat; Jun-Jie Guo; Jian-Hao Chen; Zhi-Dong Zhang
Journal:  Nat Commun       Date:  2017-10-17       Impact factor: 14.919

6.  Controlling Injection Barriers for Ambipolar 2D Semiconductors via Quasi-van der Waals Contacts.

Authors:  Junjun Wang; Feng Wang; Zhenxing Wang; Ruiqing Cheng; Lei Yin; Yao Wen; Yu Zhang; Ningning Li; Xueying Zhan; Xiangheng Xiao; Liping Feng; Jun He
Journal:  Adv Sci (Weinh)       Date:  2019-04-19       Impact factor: 16.806

7.  High-Performance Two-Dimensional InSe Field-Effect Transistors with Novel Sandwiched Ohmic Contact for Sub-10 nm Nodes: a Theoretical Study.

Authors:  Jiaduo Zhu; Jing Ning; Dong Wang; Jincheng Zhang; Lixin Guo; Yue Hao
Journal:  Nanoscale Res Lett       Date:  2019-08-15       Impact factor: 4.703

8.  Hysteresis in As-Synthesized MoS2 Transistors: Origin and Sensing Perspectives.

Authors:  Carlos Marquez; Norberto Salazar; Farzan Gity; Jose C Galdon; Carlos Navarro; Carlos Sampedro; Paul K Hurley; Edward Yi Chang; Francisco Gamiz
Journal:  Micromachines (Basel)       Date:  2021-05-31       Impact factor: 2.891

9.  Site-specific electrical contacts with the two-dimensional materials.

Authors:  Lok-Wing Wong; Lingli Huang; Fangyuan Zheng; Quoc Huy Thi; Jiong Zhao; Qingming Deng; Thuc Hue Ly
Journal:  Nat Commun       Date:  2020-08-07       Impact factor: 14.919

10.  Unusual properties and potential applications of strain BN-MS2 (M = Mo, W) heterostructures.

Authors:  Jie Su; Jian He; Junjing Zhang; Zhenhua Lin; Jingjing Chang; Jincheng Zhang; Yue Hao
Journal:  Sci Rep       Date:  2019-03-05       Impact factor: 4.379
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