| Literature DB >> 27334656 |
Adnan Mehonic1, Mark Buckwell2, Luca Montesi2, Manveer Singh Munde2,3, David Gao4, Stephen Hudziak2, Richard J Chater5, Sarah Fearn5, David McPhail5, Michel Bosman3, Alexander L Shluger4, Anthony J Kenyon6.
Abstract
Electrically biasing thin films of amorphous, substoichiometric silicon oxide drives surprisingly large structural changes, apparent as density variations, oxygen movement, and ultimately, emission of superoxide ions. Results from this fundamental study are directly relevant to materials that are increasingly used in a range of technologies, and demonstrate a surprising level of field-driven local reordering of a random oxide network.Entities:
Keywords: amorphous oxides; electrical stress; oxide nanostructure; resistive switching
Year: 2016 PMID: 27334656 DOI: 10.1002/adma.201601208
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849