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Literature DB >> 27323249

2D Layered Materials of Rare-Earth Er-Doped MoS2 with NIR-to-NIR Down- and Up-Conversion Photoluminescence.

Gongxun Bai¹, Shuoguo Yuan¹, Yuda Zhao¹, Zhibin Yang¹, Sin Yuk Choi¹, Yang Chai¹, Siu Fung Yu¹, Shu Ping Lau¹, Jianhua Hao².

Abstract

A 2D system of Er-doped MoS2 layered nanosheets is developed. Structural studies indicate that the Er atoms can be substitutionally introduced into MoS2 to form stable doping. Density functional theory calculation implies that the system remains stable. Both NIR-to-NIR up-conversion and down-conversion light-emissions are observed in 2D transition metal dichalcogenides, ascribed to the energy transition from Er(3+) dopants.

Entities: Chemical Gene

Keywords: 2D materials; photoluminescence; rare-earth ions; substitution doping; up-conversion

Year: 2016 PMID： 27323249 DOI： 10.1002/adma.201601833

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

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Cited

7 in total

Review 1. Infrared Light Emission Devices Based on Two-Dimensional Materials.

Authors: Wenyi Li; Hui Li; Karim Khan; Xiaosong Liu; Hui Wang; Yanping Lin; Lishang Zhang; Ayesha Khan Tareen; S Wageh; Ahmed A Al-Ghamdi; Daoxiang Teng; Han Zhang; Zhe Shi
Journal: Nanomaterials (Basel) Date: 2022-08-30 Impact factor: 5.719

2. First-principles study of the electronic and optical properties of Ho[Formula: see text] impurities in single-layer tungsten disulfide.

Authors: M A Khan; Michael N Leuenberger
Journal: Sci Rep Date: 2022-07-06 Impact factor: 4.996

3. Substantially Enhanced Properties of 2D WS₂ by High Concentration of Erbium Doping against Tungsten Vacancy Formation.

Authors: Hongquan Zhao; Guoxing Zhang; Bing Yan; Bo Ning; Chunxiang Wang; Yang Zhao; Xuan Shi
Journal: Research (Wash D C) Date: 2022-07-04

2D Layered Materials of Rare-Earth Er-Doped MoS2 with NIR-to-NIR Down- and Up-Conversion Photoluminescence.

Review 1. Infrared Light Emission Devices Based on Two-Dimensional Materials.

2. First-principles study of the electronic and optical properties of Ho[Formula: see text] impurities in single-layer tungsten disulfide.

3. Substantially Enhanced Properties of 2D WS₂ by High Concentration of Erbium Doping against Tungsten Vacancy Formation.

4. Chiral MoS₂ Quantum Dots: Dual-Mode Detection Approaches for Avian Influenza Viruses.

Review 5. Defect Engineering in 2D Materials: Precise Manipulation and Improved Functionalities.

6. Realization of Lasing Emission from One Step Fabricated WSe₂ Quantum Dots.

7. Enhanced Electrical Performance of Monolayer MoS₂ with Rare Earth Element Sm Doping.

2D Layered Materials of Rare-Earth Er-Doped MoS2 with NIR-to-NIR Down- and Up-Conversion Photoluminescence.

Review 1. Infrared Light Emission Devices Based on Two-Dimensional Materials.

2. First-principles study of the electronic and optical properties of Ho[Formula: see text] impurities in single-layer tungsten disulfide.

3. Substantially Enhanced Properties of 2D WS2 by High Concentration of Erbium Doping against Tungsten Vacancy Formation.

4. Chiral MoS2 Quantum Dots: Dual-Mode Detection Approaches for Avian Influenza Viruses.

Review 5. Defect Engineering in 2D Materials: Precise Manipulation and Improved Functionalities.

6. Realization of Lasing Emission from One Step Fabricated WSe₂ Quantum Dots.

7. Enhanced Electrical Performance of Monolayer MoS2 with Rare Earth Element Sm Doping.

3. Substantially Enhanced Properties of 2D WS₂ by High Concentration of Erbium Doping against Tungsten Vacancy Formation.

4. Chiral MoS₂ Quantum Dots: Dual-Mode Detection Approaches for Avian Influenza Viruses.

7. Enhanced Electrical Performance of Monolayer MoS₂ with Rare Earth Element Sm Doping.