| Literature DB >> 27308873 |
Constantin Lefter1,2, Sylvain Rat1, José Sánchez Costa1, María D Manrique-Juárez1,3, Carlos M Quintero1,3, Lionel Salmon1, Isabelle Séguy3, Thierry Leichle3, Liviu Nicu3, Philippe Demont4, Aurelian Rotaru5, Gábor Molnár6, Azzedine Bousseksou7.
Abstract
The fabrication of large-area vertical junctions with a molecular spin-crossover complex displaying concerted changes of spin degrees of freedom and charge-transport properties is reported. Fabricated devices allow spin-state switching in the spin-crossover layer to be triggered and probed by optical means, while detecting associated changes in electrical resistance in the junctions.Keywords: charge injection; hopping conduction; spin crossover; tunneling current
Year: 2016 PMID: 27308873 DOI: 10.1002/adma.201601420
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849