| Literature DB >> 27305430 |
Johannes Kern1, Iris Niehues1, Philipp Tonndorf1, Robert Schmidt1, Daniel Wigger2, Robert Schneider1, Torsten Stiehm1, Steffen Michaelis de Vasconcellos1, Doris E Reiter2, Tilmann Kuhn2, Rudolf Bratschitsch1.
Abstract
Single-photon emitters in monolayer WSe2 are created at the nanoscale gap between two single-crystalline gold nanorods. The atomically thin semiconductor conforms to the metal nanostructure and is bent at the position of the gap. The induced strain leads to the formation of a localized potential well inside the gap. Single-photon emitters are localized there with a precision better than 140 nm.Entities:
Keywords: atomically thin semiconductors; nanogaps; single-photon emitters; strain engineering; super-localization microscopy
Year: 2016 PMID: 27305430 DOI: 10.1002/adma.201600560
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849