| Literature DB >> 27248832 |
Qi Hang Qin1, Laura Äkäslompolo1, Noora Tuomisto2, Lide Yao1, Sayani Majumdar1, Jaianth Vijayakumar1, Arianna Casiraghi1, Sampo Inkinen1, Binbin Chen1, Asier Zugarramurdi2, Martti Puska2, Sebastiaan van Dijken1.
Abstract
Universal, giant and nonvolatile resistive switching is demonstrated for oxide tunnel junctions with ferroelectric PbZr0.2 Ti0.8 O3 , ferroelectric BaTiO3, and paraelectric SrTiO3 tunnel barriers. The effects are caused by reversible migration of oxygen vacancies between the tunnel barrier and bottom La2/3 Sr1/3 MnO3 electrode. The switching process, which is driven by large electric fields, is efficient down to a temperature of 5 K.Entities:
Keywords: Tsu-Esaki tunneling current formula; ferroelectric tunnel junctions; oxygen vacancy migration; resistive switching; transition metal oxides
Year: 2016 PMID： 27248832 DOI： 10.1002/adma.201504519
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849