| Literature DB >> 27248183 |
Guo Hong1, Yang Han2, Thomas M Schutzius1, Yuming Wang3, Ying Pan1, Ming Hu2,4, Jiansheng Jie3, Chander S Sharma1, Ulrich Müller5, Dimos Poulikakos1.
Abstract
It is generally accepted that the hydrophilic property of graphene can be affected by the underlying substrate. However, the role of intrinsic vs substrate contributions and the related mechanisms are vividly debated. Here, we show that the intrinsic hydrophilicity of graphene can be intimately connected to the position of its Fermi level, which affects the interaction between graphene and water molecules. The underlying substrate, or dopants, can tune hydrophilicity by modulating the Fermi level of graphene. By shifting the Fermi level of graphene away from its Dirac point, via either chemical or electrical voltage doping, we show enhanced hydrophilicity with experiments and first principle simulations. Increased vapor condensation on graphene, induced by a simple shifting of its Fermi level, exemplifies applications in the area of interfacial transport phenomena.Entities:
Keywords: Fermi-level engineering; condensation; graphene; hydrophilicity
Year: 2016 PMID: 27248183 DOI: 10.1021/acs.nanolett.6b01594
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189