Literature DB >> 27192161

Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching.

Jaeho Choi1, Sunghak Park1, Joohee Lee1, Kootak Hong1, Do-Hong Kim1, Cheon Woo Moon1, Gyeong Do Park1, Junmin Suh1, Jinyeon Hwang1, Soo Young Kim2, Hyun Suk Jung3, Nam-Gyu Park4, Seungwu Han1, Ki Tae Nam1, Ho Won Jang1.   

Abstract

Organolead halide perovskites are used for low-operating-voltage multilevel resistive switching. Ag/CH3 NH3 PbI3 /Pt cells exhibit electroforming-free resistive switching at an electric field of 3.25 × 10(3) V cm(-1) for four distinguishable ON-state resistance levels. The migration of iodine interstitials and vacancies with low activation energies is responsible for the low-electric-field resistive switching via filament formation and annihilation.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  conducting filament; ion migration; low operation voltages; multilevel resistive switching; organolead halide perovskites

Year:  2016        PMID： 27192161     DOI： 10.1002/adma.201600859

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  9 in total

1.  Mixed-Dimensional Formamidinium Bismuth Iodides Featuring In-Situ Formed Type-I Band Structure for Convolution Neural Networks.

Authors:  June-Mo Yang; Ju-Hee Lee; Young-Kwang Jung; So-Yeon Kim; Jeong-Hoon Kim; Seul-Gi Kim; Jeong-Hyeon Kim; Seunghwan Seo; Dong-Am Park; Jin-Wook Lee; Aron Walsh; Jin-Hong Park; Nam-Gyu Park
Journal:  Adv Sci (Weinh)       Date:  2022-03-20       Impact factor: 17.521

2.  Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air.

Authors:  Bohee Hwang; Jang-Sik Lee
Journal:  Sci Rep       Date:  2017-04-06       Impact factor: 4.379

3.  Effect of halide-mixing on the switching behaviors of organic-inorganic hybrid perovskite memory.

Authors:  Bohee Hwang; Chungwan Gu; Donghwa Lee; Jang-Sik Lee
Journal:  Sci Rep       Date:  2017-03-08       Impact factor: 4.379

4.  Memristic Characteristics from Bistable to Tristable Memory with Controllable Charge Trap Carbon Nanotubes.

Authors:  Lei Li; Dianzhong Wen
Journal:  Nanomaterials (Basel)       Date:  2018-02-17       Impact factor: 5.076

Review 5.  Competing memristors for brain-inspired computing.

Authors:  Seung Ju Kim; Sang Bum Kim; Ho Won Jang
Journal:  iScience       Date:  2020-12-03

6.  Three-dimensional perovskite nanowire array-based ultrafast resistive RAM with ultralong data retention.

Authors:  Yuting Zhang; Swapnadeep Poddar; He Huang; Leilei Gu; Qianpeng Zhang; Yu Zhou; Shuai Yan; Sifan Zhang; Zhitang Song; Baoling Huang; Guozhen Shen; Zhiyong Fan
Journal:  Sci Adv       Date:  2021-09-03       Impact factor: 14.136

Review 7.  Cationic Interstitials: An Overlooked Ionic Defect in Memristors.

Authors:  Zhemi Xu; Peiyuan Guan; Tianhao Ji; Yihong Hu; Zhiwei Li; Wenqing Wang; Nuo Xu
Journal:  Front Chem       Date:  2022-07-08       Impact factor: 5.545

8.  Synaptic plasticity in self-powered artificial striate cortex for binocular orientation selectivity.

Authors:  Yanyun Ren; Xiaobo Bu; Ming Wang; Yue Gong; Junjie Wang; Yuyang Yang; Guijun Li; Meng Zhang; Ye Zhou; Su-Ting Han
Journal:  Nat Commun       Date:  2022-09-23       Impact factor: 17.694

9.  Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics.

Authors:  Su-Ting Han; Liang Hu; Xiandi Wang; Ye Zhou; Yu-Jia Zeng; Shuangchen Ruan; Caofeng Pan; Zhengchun Peng
Journal:  Adv Sci (Weinh)       Date:  2017-03-16       Impact factor: 16.806
  9 in total

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