| Literature DB >> 27166762 |
Xiao Feng1,2, Yang Feng1, Jing Wang3,4, Yunbo Ou2, Zhenqi Hao1, Chang Liu1, Zuocheng Zhang1, Liguo Zhang1,2, Chaojing Lin2, Jian Liao2, Yongqing Li2, Li-Li Wang1,5, Shuai-Hua Ji1,5, Xi Chen1,5, Xucun Ma1,5, Shou-Cheng Zhang3, Yayu Wang1,5, Ke He1,5, Qi-Kun Xue1,5.
Abstract
The evolution of the quantum anomalous Hall effect with the thickness of Cr-doped (Bi,Sb)2 Te3 magnetic topological insulator films is studied, revealing how the effect is caused by the interplay of the surface states, band-bending, and ferromagnetic exchange energy. Homogeneity in ferromagnetism is found to be the key to high-temperature quantum anomalous Hall material.Entities:
Keywords: magnetic topological insulators; quantum anomalous Hall effect; thickness dependence; thin films
Year: 2016 PMID: 27166762 DOI: 10.1002/adma.201600919
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849