Warning: Undefined array key "mm" in /www/wwwroot/www.ai-bt.com/si.php on line 10 Deprecated: trim(): Passing null to parameter #1 ($string) of type string is deprecated in /www/wwwroot/www.ai-bt.com/si.php on line 10 Flexible Metal Oxide/Graphene Oxide Hybrid Neuromorphic Transistors on Flexible Conducting Graphene Substrates.

Literature DB >> 27159546

Flexible Metal Oxide/Graphene Oxide Hybrid Neuromorphic Transistors on Flexible Conducting Graphene Substrates.

Chang Jin Wan^1,2, Yang Hui Liu², Ping Feng¹, Wei Wang^1,2, Li Qiang Zhu², Zhao Ping Liu², Yi Shi¹, Qing Wan^1,2.

Abstract

Flexible metal oxide/graphene oxide hybrid multi-gate neuromorphic transistors are fabricated on flexible conducting graphene substrates. Dendritic integrations in both spatial and temporal modes are emulated, and spatiotemporal correlated logics are obtained. A proof-of-principle visual system model for emulating Lobula Giant Motion Detector neuron is also investigated. The results are of great significance for flexible sensors and neuromorphic cognitive systems.

Entities: Chemical Disease

Keywords: flexible electronics; neuromorphic engineering; neuromorphic transistors; proton-conducting graphene oxide

Year: 2016 PMID： 27159546 DOI： 10.1002/adma.201600820

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

Keyword Cloud
Cited

7 in total

1. Time-Tailoring van der Waals Heterostructures for Human Memory System Programming.

Authors: Huawei Chen; Chunsen Liu; Zuheng Wu; Yongli He; Zhen Wang; Heng Zhang; Qing Wan; Weida Hu; David Wei Zhang; Ming Liu; Qi Liu; Peng Zhou
Journal: Adv Sci (Weinh) Date: 2019-08-26 Impact factor: 16.806

2. Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication.

Authors: Geetika Khurana; Nitu Kumar; Manish Chhowalla; James F Scott; Ram S Katiyar
Journal: Sci Rep Date: 2019-10-22 Impact factor: 4.379

7. Bottom-Gate Approach for All Basic Logic Gates Implementation by a Single-Type IGZO-Based MOS Transistor with Reduced Footprint.

Authors: Shaocheng Qi; Joao Cunha; Tian-Long Guo; Peiqin Chen; Remo Proietti Zaccaria; Mingzhi Dai
Journal: Adv Sci (Weinh) Date: 2020-01-24 Impact factor: 16.806

7 in total

Flexible Metal Oxide/Graphene Oxide Hybrid Neuromorphic Transistors on Flexible Conducting Graphene Substrates.

1. Time-Tailoring van der Waals Heterostructures for Human Memory System Programming.

2. Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication.

3. A Photoelectric-Stimulated MoS₂ Transistor for Neuromorphic Engineering.

4. Low energy consumption fiber-type memristor array with integrated sensing-memory.

Review 5. Neuromorphic Devices for Bionic Sensing and Perception.

6. An artificial sensory neuron with visual-haptic fusion.

7. Bottom-Gate Approach for All Basic Logic Gates Implementation by a Single-Type IGZO-Based MOS Transistor with Reduced Footprint.

Flexible Metal Oxide/Graphene Oxide Hybrid Neuromorphic Transistors on Flexible Conducting Graphene Substrates.

1. Time-Tailoring van der Waals Heterostructures for Human Memory System Programming.

2. Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication.

3. A Photoelectric-Stimulated MoS2 Transistor for Neuromorphic Engineering.

4. Low energy consumption fiber-type memristor array with integrated sensing-memory.

Review 5. Neuromorphic Devices for Bionic Sensing and Perception.

6. An artificial sensory neuron with visual-haptic fusion.

7. Bottom-Gate Approach for All Basic Logic Gates Implementation by a Single-Type IGZO-Based MOS Transistor with Reduced Footprint.

3. A Photoelectric-Stimulated MoS₂ Transistor for Neuromorphic Engineering.