| Literature DB >> 27159503 |
Simone G Altendorf1,2, Jaewoo Jeong1, Donata Passarello1,3,4, Nagaphani B Aetukuri1, Mahesh G Samant1, Stuart S P Parkin1,2.
Abstract
Reversible metallization of band and Mott insulators by ionic-liquid gating is accompanied by significant structural changes. A change in conductivity of seven orders of magnitude at room temperature is found in epitaxial films of WO3 with an associated monoclinic-to-cubic structural reorganization. The migration of oxygen ions along open volume channels is the underlying mechanism.Entities:
Keywords: insulator-to-metal transition; ionic-liquid gating; oxygen vacancies; tungsten trioxide
Year: 2016 PMID: 27159503 DOI: 10.1002/adma.201505631
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849