Literature DB >> 27150952

Nanoscale electrochemistry using dielectric thin films as solid electrolytes.

Ilia Valov1, Wei D Lu.   

Abstract

It is now well known that at the nanoscale matters behave differently compared to bulk phases. Increased reactivity, deviations in structural, thermodynamic and kinetic properties make nanoscale materials and processes attractive for both fundamental research and applications. Here we show that nanometer thin films of materials with dielectric properties at the macroscopic level such as SiO2, Ta2O5 and HfO2 behave as solid electrolytes and exhibit evident ionic transport and electrochemical redox reactions. Experimental studies demonstrate that classical electrochemical potentiodynamic and steady state methods can be used to study the mass and charge transport at the nanoscale. We believe these reported properties of nanomatter open new opportunities for fundamental research and applications.

Entities:  

Year:  2016        PMID: 27150952     DOI: 10.1039/c6nr01383j

Source DB:  PubMed          Journal:  Nanoscale        ISSN: 2040-3364            Impact factor:   7.790


  10 in total

1.  Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing.

Authors:  Zhongrui Wang; Saumil Joshi; Sergey E Savel'ev; Hao Jiang; Rivu Midya; Peng Lin; Miao Hu; Ning Ge; John Paul Strachan; Zhiyong Li; Qing Wu; Mark Barnell; Geng-Lin Li; Huolin L Xin; R Stanley Williams; Qiangfei Xia; J Joshua Yang
Journal:  Nat Mater       Date:  2016-09-26       Impact factor: 43.841

2.  Non-volatile memories: Organic memristors come of age.

Authors:  Ilia Valov; Michael Kozicki
Journal:  Nat Mater       Date:  2017-10-23       Impact factor: 43.841

Review 3.  Ion-Movement-Based Synaptic Device for Brain-Inspired Computing.

Authors:  Chansoo Yoon; Gwangtaek Oh; Bae Ho Park
Journal:  Nanomaterials (Basel)       Date:  2022-05-18       Impact factor: 5.719

4.  Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities.

Authors:  Gianluca Milano; Michael Luebben; Zheng Ma; Rafal Dunin-Borkowski; Luca Boarino; Candido F Pirri; Rainer Waser; Carlo Ricciardi; Ilia Valov
Journal:  Nat Commun       Date:  2018-12-04       Impact factor: 14.919

5.  Capacitive neural network with neuro-transistors.

Authors:  Zhongrui Wang; Mingyi Rao; Jin-Woo Han; Jiaming Zhang; Peng Lin; Yunning Li; Can Li; Wenhao Song; Shiva Asapu; Rivu Midya; Ye Zhuo; Hao Jiang; Jung Ho Yoon; Navnidhi Kumar Upadhyay; Saumil Joshi; Miao Hu; John Paul Strachan; Mark Barnell; Qing Wu; Huaqiang Wu; Qinru Qiu; R Stanley Williams; Qiangfei Xia; J Joshua Yang
Journal:  Nat Commun       Date:  2018-08-10       Impact factor: 14.919

6.  Electrochemical Oxidation Induced Multi-Level Memory in Carbon-Based Resistive Switching Devices.

Authors:  Paola Russo; Ming Xiao; Norman Y Zhou
Journal:  Sci Rep       Date:  2019-02-07       Impact factor: 4.379

7.  Lithium ion trapping mechanism of SiO2 in LiCoO2 based memristors.

Authors:  Qi Hu; Runmiao Li; Xinjiang Zhang; Qin Gao; Mei Wang; Hongliang Shi; Zhisong Xiao; Paul K Chu; Anping Huang
Journal:  Sci Rep       Date:  2019-03-25       Impact factor: 4.379

8.  A Silk Fibroin Bio-Transient Solution Processable Memristor.

Authors:  Jason Yong; Basem Hassan; You Liang; Kumaravelu Ganesan; Ranjith Rajasekharan; Robin Evans; Gary Egan; Omid Kavehei; Jingliang Li; Gursharan Chana; Babak Nasr; Efstratios Skafidas
Journal:  Sci Rep       Date:  2017-11-07       Impact factor: 4.379

9.  Design of defect-chemical properties and device performance in memristive systems.

Authors:  M Lübben; F Cüppers; J Mohr; M von Witzleben; U Breuer; R Waser; C Neumann; I Valov
Journal:  Sci Adv       Date:  2020-05-08       Impact factor: 14.136

10.  Understanding memristive switching via in situ characterization and device modeling.

Authors:  Wen Sun; Bin Gao; Miaofang Chi; Qiangfei Xia; J Joshua Yang; He Qian; Huaqiang Wu
Journal:  Nat Commun       Date:  2019-08-01       Impact factor: 14.919

  10 in total

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