Literature DB >> 27137307

Single-material semiconductor hyperbolic metamaterials.

D Wei, C Harris, C C Bomberger, J Zhang, J Zide, S Law.   

Abstract

Layered semiconductor hyperbolic metamaterials for the mid-infrared are grown by molecular beam epitaxy using a single material system, doped and undoped InAs. The onset wavelength for metamaterial behavior can be tuned from 5.8μm to beyond 10μm, while the fill factor ranges from 0.25 to 0.75, resulting in designer optical behavior. The reflection and transmission behavior were studied by Fourier transform spectroscopy and modeled using effective medium theory. We also conducted a geometric optics experiment to demonstrate negative refraction of our materials.

Year:  2016        PMID: 27137307     DOI: 10.1364/OE.24.008735

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  3 in total

1.  Tunable Mid IR focusing in InAs based semiconductor Hyperbolic Metamaterial.

Authors:  Mai Desouky; Ahmed M Mahmoud; Mohamed A Swillam
Journal:  Sci Rep       Date:  2017-11-10       Impact factor: 4.379

2.  Silicon based mid-IR super absorber using hyperbolic metamaterial.

Authors:  Mai Desouky; Ahmed M Mahmoud; Mohamed A Swillam
Journal:  Sci Rep       Date:  2018-02-01       Impact factor: 4.379

3.  Ultrawide thermal free-carrier tuning of dielectric antennas coupled to epsilon-near-zero substrates.

Authors:  Prasad P Iyer; Mihir Pendharkar; Chris J Palmstrøm; Jon A Schuller
Journal:  Nat Commun       Date:  2017-09-07       Impact factor: 14.919

  3 in total

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