Literature DB >> 27127976

Pressure-Resistant Intermediate Valence in the Kondo Insulator SmB_{6}.

Nicholas P Butch1,2,3, Johnpierre Paglione1, Paul Chow4, Yuming Xiao4, Chris A Marianetti5, Corwin H Booth6, Jason R Jeffries3.   

Abstract

Resonant x-ray emission spectroscopy was used to determine the pressure dependence of the f-electron occupancy in the Kondo insulator SmB_{6}. Applied pressure reduces the f occupancy, but surprisingly, the material maintains a significant divalent character up to a pressure of at least 35 GPa. Thus, the closure of the resistive activation energy gap and onset of magnetic order are not driven by stabilization of an integer valent state. Over the entire pressure range, the material maintains a remarkably stable intermediate valence that can in principle support a nontrivial band structure.

Year:  2016        PMID: 27127976     DOI: 10.1103/PhysRevLett.116.156401

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  1 in total

1.  Surface-dominated conduction up to 240 K in the Kondo insulator SmB6 under strain.

Authors:  A Stern; M Dzero; V M Galitski; Z Fisk; J Xia
Journal:  Nat Mater       Date:  2017-04-03       Impact factor: 43.841

  1 in total

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