| Literature DB >> 27123892 |
Dongming Yan1, Chang Liu2, Wenxiang Chai3, Xuerong Zheng2, Luodong Zhang1, Mingjia Zhi2, Chunmei Zhou2, Qichun Zhang4,5, Yi Liu6.
Abstract
Two new quaternary thioarsenates(III), SrAg4 As2 S6 ⋅2 H2 O (1) and BaAgAsS3 (2), have been prepared through a hydrazine-hydrothermal method at low temperature. Compound 1 possesses a two-dimensional (2D) layer network, while compound 2 features a one-dimensional (1D) column structure. The detailed structure analysis indicates that Sr(2+) and Ba(2+) cations have different directing effects on the structures of thioarsenates(III). Both experimental and theoretical studies demonstrate that compounds 1 and 2 are narrow-gap semiconductors. Our success in synthesizing these two quaternary thioarsenates(III) proves that the hydrazine-hydrothermal technique is a powerful yet facile synthetic method for exploring new complex chalcogenides with diverse crystal structures and interesting physical properties.Entities:
Keywords: column structure; hydrazine-hydrothermal; layer networks; semiconductors; thioarsenates(III)
Year: 2016 PMID: 27123892 DOI: 10.1002/asia.201600381
Source DB: PubMed Journal: Chem Asian J ISSN: 1861-471X