| Literature DB >> 27120773 |
Dae-Yeon Jo1, Daekyoung Kim2, Jong-Hoon Kim1, Heeyeop Chae2, Hyo Jin Seo3, Young Rag Do4, Heesun Yang1.
Abstract
Fluorescence of semiconductor quantum dots (QDs) can be tuned by engineering the band gap via size and composition control and further doping them with impurity ions. Targeting on highly bright white-emissive I-III-VI -type copper gallium sulfide (Cu-Ga-S, CGS) host QDs with the entire visible spectral coverage of blue to red, herein, Mn(2+) ion doping, through surface adsorption and lattice diffusion is fulfilled. Upon doping a distinct Mn emission from (4)T1-(6)A1 transition successfully appears in white photoluminescence (PL) of undoped CGS/ZnS core/shell QDs and with varying Mn concentration a systematic white spectral evolution of CGS:Mn/ZnS QDs is achievable with high PL quantum yield retained. The origins of white PL of CGS:Mn/ZnS QDs that is well decomposed into three emission bands are appropriately assigned. The resulting single-phased, doped QDs are then employed as near-UV-to-white down converters for the fabrication of white light-emitting diodes (LEDs). Electroluminescent properties of white QD-LEDs depending on Mn concentration of CGS:Mn/ZnS QDs and forward current are also discussed in detail.Entities:
Keywords: Mn doping; copper gallium sulfide; down converters; single-phased quantum dots; white lighting devices; white photoluminescence
Year: 2016 PMID: 27120773 DOI: 10.1021/acsami.6b01763
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229