| Literature DB >> 27120487 |
Kai Xu1, Yun Huang1, Bo Chen2, Yang Xia2, Wen Lei3, Zhenxing Wang1, Qisheng Wang1, Feng Wang1, Lei Yin1, Jun He1.
Abstract
Top-gate HfS2 field-effect transistors (FETs) with 5 nm HfO2 as dielectrics are successfully demonstrated, with on/off ratio of 10(5) and subthreshold swing of 95 mV dec(-1) . Moreover, due to the self-functionalization of HfS2 , uniform and ultrathin HfO2 film free of pinhole-like defects could be deposited on HfS2 , which is dramatically different from other transition metal dichalcogenide FETs.Entities:
Keywords: HfO2; HfS2; field-effect transistors; interface engineering
Year: 2016 PMID： 27120487 DOI： 10.1002/smll.201600521
Source DB: PubMed Journal: Small ISSN： 1613-6810 Impact factor: 13.281