| Literature DB >> 27119207 |
Li Ming Loong1, Wonho Lee2, Xuepeng Qiu1, Ping Yang3, Hiroyo Kawai4, Mark Saeys5, Jong-Hyun Ahn2, Hyunsoo Yang1.
Abstract
Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process. This approach could be useful for flexible electronic systems that require high-performance memory components.Entities:
Keywords: flexible electronics; magnetic tunnel junctions; spintronics; strain engineering; tunneling magnetoresistance
Year: 2016 PMID： 27119207 DOI： 10.1002/adma.201600062
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849