| Literature DB >> 27110452 |
Abstract
We discuss the ability of the nation's measurement system to meet future metrology needs of the semiconductor industry. Lacking an acceptable metric for assessing the health of metrology for the semiconductor industry, we identify a limited set of unmet measurement needs. Assuming that this set of needs may serve as proxy for the galaxy of semiconductor measurement needs, we examine it from the perspective of what will be required to continue the semiconductor industry's powerful impact in the world's macro-economy and maintain its exceptional record of numerous technological innovations. This paper concludes with suggestions about ways to strengthen the measurement system for the semiconductor industry.Entities:
Keywords: United States Measurement System (USMS); economic forces; measurement needs; metrology; semiconductor industry; standards; technological innovation; technology roadmaps
Year: 2007 PMID: 27110452 PMCID: PMC4654602 DOI: 10.6028/jres.112.002
Source DB: PubMed Journal: J Res Natl Inst Stand Technol ISSN: 1044-677X
Metrology Difficult Challenges Table - Adapted from the 2005 ITRS Table 116. The Summary of Issues column in the following Metrology Difficult Challenges Table that appeared in the 2005 ITRS as Table 116[2] lists where appropriate each of the 14 semiconductor case studies of measurement needs from Appendix B of Reference 1. The bold fonts designate the shorthand notations for these case studies. This Table was adapted from Table 116 with permission from the ITRS. Appendix 1 contains the page numbers for each of the case studies in Appendix B of Reference 1.
| Difficult Challenges ≥32 nm | Summary of Issues |
|---|---|
| Factory level and company wide metrology integration for real-time in situ, integrated, and inline metrology tools; continued development of robust sensors and process controllers; and data management that allows integration of add-on sensors. | Standards for process controllers and data management must be agreed upon. Conversion of massive quantities of raw data to information useful for enhancing the yield of a semiconductor manufacturing process. Better sensors must be developed for trench etch end point, and ion species/energy/dosage (current). |
| Starting materials metrology and manufacturing metrology are impacted by the introduction of new substrates such as SOI. Impurity detection (especially particles) at levels of interest for starting materials and reduced edge exclusion for metrology tools. CD, film thickness, and defect detection are impacted by thin SOI optical properties and charging by electron and ion beams. | Existing capabilities will not meet Roadmap specifications. Very small particles must be detected and properly sized. Capability for SOI wafers needs enhancement. Challenges come from the extra optical reflection in SOI and the surface quality. |
| Control of high-aspect ratio technologies such as damascene challenges all metrology methods. Key requirements are dimensional control, void detection in copper lines, and pore size distribution and detection of killer pores in patterned low-k dielectrics. | New process control needs are not yet established. For example, 3D (CD and depth) measurements will be required for trench structures in new low-k dielectrics. Sidewall roughness impacts barrier integrity and the electrical properties of lines and vias. |
| Measurement of complex material stacks and interfacial properties including physical and electrical properties. | Reference materials and standard measurement methodology for new high-k gate and capacitor dielectrics with engineered thin films and interface layers as well as interconnect barrier and low-k dielectric layers, and other process needs. Optical measurement of gate and capacitor dielectric averages over too large an area and needs to characterize interfacial layers. Carrier mobility characterization will be needed for stacks with strained silicon and SOI substrates. The same is true for measurement of barrier layers. Metal gate work function characterization is another pressing need. |
| Measurement test structures and reference materials. | The area available for test structures is being reduced especially in the scribe lines. There is a concern that measurements on test structures located in scribe lines do not correlate with in-die performance. Overlay and other test structures are sensitive to process variation, and test structure design must be improved to ensure correlation between measurements in the scribe line and on chip properties. Standards institutions need rapid access to state of the art development and manufacturing capability to fabricate relevant reference materials. |
| Difficult Challenges ≥32 nm | |
| Nondestructive, production worthy wafer and mask-level microscopy for critical dimension measurement for 3D structures, overlay, defect detection, and analysis. | Surface charging and contamination interfere with electron beam imaging. CD measurements must account for sidewall shape. CD for damascene process may require measurement of trench structures. Process control such as focus exposure and etch bias will require greater precision and 3D capability. |
| New strategy for in-die metrology must reflect across chip and across wafer variation. | Correlation of test structure variations with in-die properties is becoming more difficult as device shrinks. |
| Statistical limits of sub-32 nm process control. | Controlling processes where the natural stochastic variation limits metrology will be difficult. Examples are low-dose implant, thin-gate dielectrics, and edge roughness of very small structures. |
| Structural and elemental analysis at device dimensions and measurements for beyond CMOS. | Materials characterization and metrology methods are needed for control of interfacial layers, dopant positions, defects, and atomic concentrations relative to device dimensions. One example is 3D dopant profiling. Measurements for self-assembling processes are also required. |
| Determination of manufacturing metrology when device and interconnect technology remain unde-fined. | The replacement devices for the transistor and structure and materials replacement for copper interconnect are being researched. |
+ Please refer to Appendix 1 to locate the case study of the measurement need in Appendix B of Reference 1.
Fig. 1Research and development for semiconductor chip manufacturing compared to revenues.
| Case Study of Measurement Need - Technology at Issue | Page Number in Appendix B of Reference | Shorthand Notation Used in |
|---|---|---|
| In-line Inspection and Factory Control Equipment | 204 | Control |
| In-line/Real-time Analytic Tools for Measuring and Detecting Sub-10 nm Defects | 205 | Detection |
| Dopant Distribution Instrumentation | 206 | Distributions |
| Interfacial Characterization Instrumentation | 207 | Interfaces |
| 3D Atomic Mapping Instrumentation - Structural and Materials Properties | 208 | 3D Mapping |
| Next-generation optical microscopes | 209 | Microscopes |
| Atomic Mapping Instrumentation - Light Elements | 210 | Light Element Mapping |
| Compound Semiconductor Cluster Tools | 211 | III–V Cluster Tools |
| Full System-on-Chip for Wireless Communications | 212 | RF Isolation |
| Sub-10 nm SEM Metrology Tools | 213 | SEM |
| Sidewall Characterization Instrumentation | 214 | Sidewall |
| Spin Metrology Tools | 215 | Spin |
| Semiconductor industry defect metrology tools | 216 | X-Ray |
| Instrumentation for Measurement of Electrical Properties at the Nanoscale | 217 | Electrical Properties |