| Literature DB >> 27078621 |
Bong Hoon Kim1, Sooji Nam1, Nuri Oh1, Seong-Yong Cho1, Ki Jun Yu1, Chi Hwan Lee2, Jieqian Zhang3, Kishori Deshpande4, Peter Trefonas3, Jae-Hwan Kim1, Jungyup Lee1, Jae Ho Shin1, Yongjoon Yu1, Jong Bin Lim1, Sang M Won1, Youn Kyoung Cho1, Nam Heon Kim1, Kyung Jin Seo1, Heenam Lee1, Tae-Il Kim5, Moonsub Shim1, John A Rogers1.
Abstract
Here, we report multilayer stacking of films of quantum dots (QDs) for the purpose of tailoring the energy band alignment between charge transport layers and light emitting layers of different color in quantum dot light-emitting diodes (QD LED) for maximum efficiency in full color operation. The performance of QD LEDs formed by transfer printing compares favorably to that of conventional devices fabricated by spin-casting. Results indicate that zinc oxide (ZnO) and titanium dioxide (TiO2) can serve effectively as electron transport layers (ETLs) for red and green/blue QD LEDs, respectively. Optimized selections for each QD layer can be assembled at high yields by transfer printing with sacrificial fluoropolymer thin films to provide low energy surfaces for release, thereby allowing shared common layers for hole injection (HIL) and hole transport (HTL), along with customized ETLs. This strategy allows cointegration of devices with heterogeneous energy band diagrams, in a parallelized scheme that offers potential for high throughput and practical use.Entities:
Keywords: energy band diagram; light-emitting diode; quantum dots; transfer printing
Year: 2016 PMID: 27078621 DOI: 10.1021/acsnano.5b06387
Source DB: PubMed Journal: ACS Nano ISSN: 1936-0851 Impact factor: 15.881