Literature DB >> 27061009

Ternary Flexible Electro-resistive Memory Device based on Small Molecules.

Qi-Jian Zhang1, Jing-Hui He1, Hao Zhuang1, Hua Li2, Na-Jun Li1, Qing-Feng Xu1, Dong-Yun Chen1, Jian-Mei Lu3.   

Abstract

Flexible memory devices have continued to attract more attention due to the increasing requirement for miniaturization, flexibility, and portability for further electronic applications. However, all reported flexible memory devices have binary memory characteristics, which cannot meet the demand of ever-growing information explosion. Organic resistive switching random access memory (RRAM) has plenty of advantages such as simple structure, facile processing, low power consumption, high packaging density, as well as the ability to store multiple states per bit (multilevel). In this study, we report a small molecule-based flexible ternary memory device for the first time. The flexible device maintains its ternary memory behavior under different bending conditions and within 500 bending cycles. The length of the alkyl chains in the molecular backbone play a significant role in molecular stacking, thus guaranteeing satisfactory memory and mechanical properties.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords:  memory devices; molecular stacking; side chains; ternary memory

Year:  2016        PMID: 27061009     DOI: 10.1002/asia.201600304

Source DB:  PubMed          Journal:  Chem Asian J        ISSN: 1861-471X


  1 in total

1.  Changing molecular conjugation with a phenazine acceptor for improvement of small molecule-based organic electronic memory performance.

Authors:  Quan Liu; Caibin Zhao; Guanghui Tian; Hongguang Ge
Journal:  RSC Adv       Date:  2018-01-03       Impact factor: 3.361

  1 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.