Nonvolatile memory devices based on poly(vinyl alcohol) + graphene oxide hybrid composites.

Nonvolatile memory devices based on active layers of poly(vinyl alcohol) (PVA) + graphene oxide (GO) hybrid composites have been fabricated. The performance of the ITO/PVA + GO/Al device was compared with that of the ITO/PVA/Al device. The ITO/PVA + GO/Al device showed excellent performance compared to the ITO/PVA/Al device (an ON/OFF resistance ratio of 1.2 × 10(2) at 1 V, V(SET )∼ -1.45 V and V(RESET) ∼ 3.6 V), with a higher ON/OFF resistance ratio of 3 × 10(4) at 1 V and lower operating voltages of V(SET) ∼ -0.75 V and V(RESET) ∼ 3.0 V. Furthermore, endurance performance and write-read-erase-reread (WRER) cycle tests manifest that the presence of GO in ITO/PVA + GO/Al devices makes them have better stability and repeatability. The results show that the performance of hybrid devices can be effectively enhanced by the introduction of GO into the PVA matrix.