Literature DB >> 27046672

Pressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires.

Nicolas Chauvin1, Amaury Mavel1,2, Gilles Patriarche3, Bruno Masenelli1, Michel Gendry2, Denis Machon4.   

Abstract

The elastic properties of InP nanowires are investigated by photoluminescence measurements under hydrostatic pressure at room temperature and experimentally deduced values of the linear pressure coefficients are obtained. The pressure-induced energy shift of the A and B transitions yields a linear pressure coefficient of αA = 88.2 ± 0.5 meV/GPa and αB = 89.3 ± 0.5 meV/GPa with a small sublinear term of βA = βB = -2.7 ± 0.2 meV/GPa(2). Effective hydrostatic deformation potentials of -6.12 ± 0.04 and -6.2 ± 0.04 eV are derived from the results for the A and B transitions, respectively. A decrease of the integrated intensity is observed above 0.5 GPa and is interpreted as a carrier transfer from the first to the second conduction band of the wurtzite InP.

Entities:  

Keywords:  InP nanowires; deformation potentials; high-pressure; optical properties; wurtzite material

Year:  2016        PMID: 27046672     DOI: 10.1021/acs.nanolett.5b04646

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  1 in total

1.  Tuning Hole Mobility of Individual p-Doped GaAs Nanowires by Uniaxial Tensile Stress.

Authors:  Lunjie Zeng; Jonatan Holmér; Rohan Dhall; Christoph Gammer; Andrew M Minor; Eva Olsson
Journal:  Nano Lett       Date:  2021-04-29       Impact factor: 11.189

  1 in total

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