| Literature DB >> 27044485 |
Yang Zhou1, Lu You1, Shiwei Wang1, Zhiliang Ku2, Hongjin Fan2, Daniel Schmidt3, Andrivo Rusydi3, Lei Chang1, Le Wang1, Peng Ren1, Liufang Chen4, Guoliang Yuan4, Lang Chen5, Junling Wang1.
Abstract
Among the many materials investigated for next-generation photovoltaic cells, organic-inorganic leadEntities:
Year: 2016 PMID: 27044485 PMCID: PMC4822042 DOI: 10.1038/ncomms11193
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919
Figure 1Basic properties of the MAPbI3 single crystals.
(a) Photograph of a MAPbI3 single crystal used in this study. (b) Perspective view of the unit cell of tetragonal MAPbI3. (c) Typical topography of the single crystal obtained by AFM, showing smooth surface with unit-cell steps. The scan size is 1 × 1 μm. (d) Height profile along the blue dash line denoted in c. (e) X-ray diffraction pattern of the crystal, which only shows tetragonal (l00) type peaks, indicating the high quality of the single crystal. (f) Direct-transition tauc plot according to the absorption coefficient of the crystal, from which a direct band gap of 1.575 eV is extracted. The red solid line is the linear fit. (g) The penetration depth deduced from the absorption coefficient.
Figure 2Photostrictive effect of MAPbI3 single crystals.
(a) Schematic drawing of the experimental set-up for the photostrictive measurements. The AFM tip is fixed at one point on the sample to record the height as a function of time. (b) Photostriction in the MAPbI3 single crystal. Both (100)T- and (010)T-oriented single crystals produce a similar elongation of ∼50 p.p.m. under 100 mW cm−2 white-light illumination. The height change of a Si single crystal is also measured as a comparison. Cyan and green dash lines delineate the fast and slow components of the height change, respectively. (c) Light intensity dependence of the photostrictive effect. The inset shows the proportional relationship between the photostriction and light intensity. (d) A comparison between the height and current changes on light irradiation.
Figure 3Photon energy dependence of the photostriction.
(a) When the photon energy is close to or above the band gap (that is, 460, 650 and 808 nm lasers), large current on illumination (under 1 V voltage) is observed, whereas negligible photocurrent is obtained when photon energy is below the band gap (that is, 980 nm laser). (b) The photostriction shows similar behaviour to that of photocurrent. (c) Photocurrents and height changes of the single crystal as functions of the incident photon energy, showing clear correlation between these two properties. The light intensity was kept at ∼100 mW cm−2 for all lasers. The black solid line serves as a guide to the eye.
Figure 4Photovoltaic and photostrictive properties of MAPbI3 thin films.
(a) Typical current density–voltage characteristic of a MAPbI3 thin-film photovoltaic cell (FTO/TiO2/MAPbI3/Spiro-OMeTAD/Ag) under simulated AM1.5 100 mW cm−2 illumination (red line) and under dark (black line). The power conversion efficiency can reach 12.5%. The inset shows the SEM image of the MAPbI3 thin film. The scale bar, 1 μm. (b) Height change of the MAPbI3 thin film (4 μm) on FTO-coated glass substrate under illumination. The net response from the film can be obtained by substracting the extrinsic contribution from the substrate. Under 100 mW cm−2 white light, about 5 nm height change can be observed, corresponding to a photostriction of 1,250 p.p.m.
Photostrictive coefficients of different materials.
| Non-polar semiconductors | Si crystal | −6.4 × 10−6 | 8.47 × 1010 | −7.56 × 10−17 | |
| Ge crystal | 7.84 × 10−10 | 1,000 | 7.84 × 10−13 | ||
| Polar semiconductors | CdS crystal | 7.5 × 10−5 | 1,000 | 7.5 × 10−8 | |
| GaAs crystal | 4 × 10−7 | 1,000 | 4 × 10−10 | ||
| Ferroelectric materials | SbSI crystal | 4 × 10−5 | 1,000 | 4 × 10−8 | |
| La doped Pb(Zr | 10−4 | 150 | 6.67 × 10−7 | ||
| BiFeO3 crystal | 3 × 10−5 | 326 | 9.2 × 10−8 | ||
| BiFeO3 film (35 nm) | 4.6 × 10−3 | ∼4 × 1014 | 1.15 × 10−17 | ||
| PbTiO3 film (20 nm) | 2.5 × 10−3 | ∼1015 | 2.5 × 10−18 | ||
| Chalcogenide glasses | As40Se25S25Ge10 film | 4.5 × 10−4 | 1,000 | 4.5 × 10−7 | |
| As2Se3 film | 6.4 × 10−2 | 400 | 1.6 × 10−4 | ||
| As2S3 film | 5.4 × 10−2 | 400 | 1.35 × 10−4 | ||
| GeSe2 film | −5.6 × 10−2 | 400 | −1.4 × 10−4 | ||
| GeS2 film | −1.1 × 10−1 | 400 | −2.75 × 10−4 | ||
| Organic materials | Poly-(4,4′-diaminoazoben-zenepyromelliti-mide) films | −1.2 × 10−2 | 1,000 | −1.2 × 10−5 | |
| Nematic elastomers | 2 × 10−1 | 1,000 | 2 × 10−4 | ||
| Poly(ethylacrylate) networks with azo-aromatic crosslinks | 2.5 × 10−3 | 1,000 | 2.5 × 10−6 | ||
| Diarylethenes | −7 × 10−2 | 5,200 | −1.35 × 10−5 | ||
| Hybrid perovskites | MAPbI3 crystal | 5 × 10−5 | 1,000 | 5 × 10−8 | Current work |
| MAPbI3 film (4 μm) | 1.25 × 10−3 | 1,000 | 1.25 × 10−6 |
*The light intensity was not reported in the references and we use 1,000 W m−2 (1 Sun) to calculate the photostrictive coefficients.
†The light sources were high-energy laser pulses.
Figure 5Proposed mechansim for the giant photostriction in MAPbI3.
(a,b) Schematic illustrations (not to scale) showing that the weakening of the hydrogen bonding between the amine group and the iodine ion by photo-generated carriers leads to the lattice expansion. (c) Orientation dependence of photostriction of a MAPbI3 single crystal shows similar magntidue due to the isotropic expansion of the lattice. (d,e) Temperature-dependent photostriction of a MAPbI3 single crystal across the tetragonal-cubic phase transition under 100 mW cm−2 white light. The phase transition point is indicated by the black dash line. Enhanced lattice susceptibility around the phase transition boundary is likely responsible for the larger photostriction observed.