| Literature DB >> 27033847 |
Xu Li1,2, Aiwei Tang3, Jiantao Li1, Li Guan2, Guoyi Dong2, Feng Teng4,5.
Abstract
Molybdenum disulfide (MoS2) nanosheets were synthesized by using a simple heating-up approach, in which 1-dodecanethiol (DDT) was used not only as a sulfur source but also as the surface ligand. The sheet-like morphology was confirmed by the transmission electron microscopy (TEM) and atomic force microscopy (AFM) results, and the X-ray diffraction (XRD) patterns and Raman spectrum were employed to characterize the structure of the as-synthesized MoS2 nanosheets. The as-obtained MoS2 nanosheets blending with a polymer could be used to fabricate an electrically bistable device through a simple spin-coating method, and the device exhibited an obvious electrical bistability in the I-V curve. The charge transport of the device was discussed based on the organic electronic models.Entities:
Keywords: Charge transport; Electrically bistable device; MoS2; Nanosheets
Year: 2016 PMID: 27033847 PMCID: PMC4816948 DOI: 10.1186/s11671-016-1385-x
Source DB: PubMed Journal: Nanoscale Res Lett ISSN: 1556-276X Impact factor: 4.703
Fig. 1TGA and DTG curves of the Mo-thiolate precursor
Fig. 2High-resolution XPS results of a Mo 3d and b S 2p of MoS2 nanosheets
Fig. 3FTIR spectrum of DDT-capped MoS2 nanosheets. The inset shows the FTIR spectrum of free DDT
Fig. 4a XRD patterns and b Raman spectrum of MoS2 nanosheets
Fig. 5TEM images of MoS2 nanosheets obtained at different reaction times: a 30 min, b 120 min; d 240 min, and c the HRTEM image of MoS2 nanosheets obtained at 120 min
Fig. 6a A typical AFM image of MoS2 nanosheets obtained at 240 min and b, c the topographic height profiles of the two parts labeled in a
Fig. 7a Schematic illustration of the fabrication process of the electrically bistable devices, b device structure and the molecular structure of PVK, and c current-voltage of the device
Fig. 8Experimental data (open cycle) and theoretical fitting curve (solid line) of I-V characteristics in the positive voltage region of electrically bistable devices: a relationship between logI and log(V) in the region of 0–1.5 V (OFF state); b relationship between logI and logV in the region of 1.5–2 V (OFF state); and c relationship between logI and logV in the region of 0–3 V (ON state)