Literature DB >> 27026281

Preparation and Loading Process of Single Crystalline Samples into a Gas Environmental Cell Holder for In Situ Atomic Resolution Scanning Transmission Electron Microscopic Observation.

Rainer Straubinger1, Andreas Beyer1, Kerstin Volz1.   

Abstract

A reproducible way to transfer a single crystalline sample into a gas environmental cell holder for in situ transmission electron microscopic (TEM) analysis is shown in this study. As in situ holders have only single-tilt capability, it is necessary to prepare the sample precisely along a specific zone axis. This can be achieved by a very accurate focused ion beam lift-out preparation. We show a step-by-step procedure to prepare the sample and transfer it into the gas environmental cell. The sample material is a GaP/Ga(NAsP)/GaP multi-quantum well structure on Si. Scanning TEM observations prove that it is possible to achieve atomic resolution at very high temperatures in a nitrogen environment of 100,000 Pa.

Entities:  

Keywords:  FIB preparation; III/V semiconductor; STEM; environmental cell; in situ

Year:  2016        PMID: 27026281     DOI: 10.1017/S1431927616000593

Source DB:  PubMed          Journal:  Microsc Microanal        ISSN: 1431-9276            Impact factor:   4.127


  1 in total

1.  Thermally Introduced Bismuth Clustering in Ga(P,Bi) Layers under Group V Stabilised Conditions Investigated by Atomic Resolution In Situ (S)TEM.

Authors:  R Straubinger; M Widemann; J Belz; L Nattermann; A Beyer; K Volz
Journal:  Sci Rep       Date:  2018-06-13       Impact factor: 4.379

  1 in total

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