| Literature DB >> 27007295 |
Jiang Pu1, Kazuma Funahashi1, Chang-Hsiao Chen2, Ming-Yang Li3,4, Lain-Jong Li3, Taishi Takenobu1,5.
Abstract
Complementary inverters constructed from large-area monolayers of WSe2 and MoS2 achieve excellent logic swings and yield an extremely high gain, large total noise margin, low power consumption, and good switching speed. Moreover, the WSe2 complementary-like inverters built on plastic substrates exhibit high mechanical stability. The results provide a path toward large-area flexible electronics.Entities:
Keywords: CMOS inverters; chemical vapor deposition; electric double layer transistors; flexible electronics; transition metal dichalcogenide monolayers
Year: 2016 PMID： 27007295 DOI： 10.1002/adma.201503872
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849