| Literature DB >> 26972820 |
Chang Jin Wan1,2, Li Qiang Zhu2, Yang Hui Liu2, Ping Feng1, Zhao Ping Liu2, Hai Liang Cao2, Peng Xiao2, Yi Shi1, Qing Wan1,2.
Abstract
Proton-conducting graphene oxide electrolyte films with very high electric-double-layer capacitance are used as the gate dielectrics for oxide-based neuron transistor fabrication. Paired-pulse facilitation, dendritic integration, and orientation tuning are successfully emulated. Additionally, neuronal gain controls (arithmetic) are also experimentally demonstrated. The results provide a new-concept approach for building brain-inspired cognitive systems.Entities:
Keywords: neuromorphic engineering; neuron transistors; proton-conducting graphene oxide
Mesh:
Substances:
Year: 2016 PMID: 26972820 DOI: 10.1002/adma.201505898
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849