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Literature DB >> 26950255

Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe₂/MoS₂ van der Waals Heterostructures.

Kenan Zhang¹, Tianning Zhang¹, Guanghui Cheng², Tianxin Li¹, Shuxia Wang¹, Wei Wei¹, Xiaohao Zhou¹, Weiwei Yu¹, Yan Sun¹, Peng Wang¹, Dong Zhang³, Changgan Zeng², Xingjun Wang¹, Weida Hu¹, Hong Jin Fan⁴, Guozhen Shen³, Xin Chen¹, Xiangfeng Duan⁵, Kai Chang^3,6, Ning Dai^1,6.

Abstract

We demonstrate the type-II staggered band alignment in MoTe2/MoS2 van der Waals (vdW) heterostructures and an interlayer optical transition at ∼1.55 μm. The photoinduced charge separation between the MoTe2/MoS2 vdW heterostructure is verified by Kelvin probe force microscopy (KPFM) under illumination, density function theory (DFT) simulations and photoluminescence (PL) spectroscopy. Photoelectrical measurements of MoTe2/MoS2 vdW heterostructures show a distinct photocurrent response in the infrared regime (1550 nm). The creation of type-II vdW heterostructures with strong interlayer coupling could improve our fundamental understanding of the essential physics behind vdW heterostructures and help the design of next-generation infrared optoelectronics.

Keywords: MoS2; MoTe2; interlayer transition; type-II band alignment; van der Waals heterostructure

Year: 2016 PMID： 26950255 DOI： 10.1021/acsnano.6b00980

Source DB: PubMed Journal: ACS Nano ISSN： 1936-0851 Impact factor: 15.881

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Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe₂/MoS₂ van der Waals Heterostructures.

1. In-sensor computing for machine vision.

2. Novel Van Der Waals Heterostructures Based on Borophene, Graphene-like GaN and ZnO for Nanoelectronics: A First Principles Study.

Review 3. 2D Materials for Efficient Photodetection: Overview, Mechanisms, Performance and UV-IR Range Applications.

Review 4. Retracted Article: Physics of excitons and their transport in two dimensional transition metal dichalcogenide semiconductors.

5. Recent advances in infrared imagers: toward thermodynamic and quantum limits of photon sensitivity.

6. Booming Development of Group IV-VI Semiconductors: Fresh Blood of 2D Family.

Review 7. Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides.

8. Van der Waals epitaxial growth and optoelectronics of large-scale WSe₂/SnS₂ vertical bilayer p-n junctions.

Review 9. Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures.

10. Pronounced Photovoltaic Response from Multi-layered MoTe₂ Phototransistor with Asymmetric Contact Form.

Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe₂/MoS₂ van der Waals Heterostructures.

1. In-sensor computing for machine vision.

2. Novel Van Der Waals Heterostructures Based on Borophene, Graphene-like GaN and ZnO for Nanoelectronics: A First Principles Study.

Review 3. 2D Materials for Efficient Photodetection: Overview, Mechanisms, Performance and UV-IR Range Applications.

Review 4. Retracted Article: Physics of excitons and their transport in two dimensional transition metal dichalcogenide semiconductors.

5. Recent advances in infrared imagers: toward thermodynamic and quantum limits of photon sensitivity.

6. Booming Development of Group IV-VI Semiconductors: Fresh Blood of 2D Family.

Review 7. Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides.

8. Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions.

Review 9. Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures.

10. Pronounced Photovoltaic Response from Multi-layered MoTe2 Phototransistor with Asymmetric Contact Form.

8. Van der Waals epitaxial growth and optoelectronics of large-scale WSe₂/SnS₂ vertical bilayer p-n junctions.

10. Pronounced Photovoltaic Response from Multi-layered MoTe₂ Phototransistor with Asymmetric Contact Form.