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Literature DB >> 26936489

p-Type MoS2 and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect.

Fei Xue¹, Libo Chen¹, Jian Chen¹, Jingbin Liu¹, Longfei Wang¹, Mengxiao Chen¹, Yaokun Pang¹, Xiaonian Yang¹, Guoyun Gao¹, Junyi Zhai¹, Zhong Lin Wang^1,2.

Abstract

A plasma-induced p-type MoS2 flake and n-type ZnO film diode, which exhibits an excellent rectification ratio, is demonstrated. Under 365 nm optical irradiation, this p-n diode shows a strong photoresponse with an external quantum efficiency of 52.7% and a response time of 66 ms. By increasing the pressure on the junction to 23 MPa, the photocurrent can be enhanced by a factor of four through the piezophototronic effect.

Entities: Chemical

Keywords: diodes; n-type ZnO; p-type MoS2; photoresponse; piezophototronic effect

Year: 2016 PMID： 26936489 DOI： 10.1002/adma.201506472

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

Keyword Cloud
Cited

7 in total

Review 1. A review of molybdenum disulfide (MoS₂) based photodetectors: from ultra-broadband, self-powered to flexible devices.

Authors: Hari Singh Nalwa
Journal: RSC Adv Date: 2020-08-19 Impact factor: 4.036

2. Highly Sensitive, Ultrafast, and Broadband Photo-Detecting Field-Effect Transistor with Transition-Metal Dichalcogenide van der Waals Heterostructures of MoTe₂ and PdSe₂.

Authors: Amir Muhammad Afzal; Muhammad Zahir Iqbal; Ghulam Dastgeer; Aqrab Ul Ahmad; Byoungchoo Park
Journal: Adv Sci (Weinh) Date: 2021-03-16 Impact factor: 16.806

3. High-Speed Scalable Silicon-MoS₂ P-N Heterojunction Photodetectors.

Authors: Veerendra Dhyani; Samaresh Das
Journal: Sci Rep Date: 2017-03-10 Impact factor: 4.379

4. Ultrasensitive all-2D MoS₂ phototransistors enabled by an out-of-plane MoS₂ PN homojunction.

Authors: Nengjie Huo; Gerasimos Konstantatos
Journal: Nat Commun Date: 2017-09-18 Impact factor: 14.919

5. UV-Visible Photodetector Based on I-type Heterostructure of ZnO-QDs/Monolayer MoS₂.

Authors: Yong Heng Zhou; Zhi Bin Zhang; Ping Xu; Han Zhang; Bing Wang
Journal: Nanoscale Res Lett Date: 2019-12-04 Impact factor: 4.703

6. Diverse Functionalities of Vertically Stacked Graphene/Single layer n-MoS₂/SiO₂/p-GaN Heterostructures.

Authors: Packiyaraj Perumal; Chelladurai Karuppiah; Wei-Cheng Liao; Yi-Rou Liou; Yu-Ming Liao; Yang-Fang Chen
Journal: Sci Rep Date: 2017-08-30 Impact factor: 4.379

Review 7. Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics.

Authors: Yanhao Wang; Jinbo Pang; Qilin Cheng; Lin Han; Yufen Li; Xue Meng; Bergoi Ibarlucea; Hongbin Zhao; Feng Yang; Haiyun Liu; Hong Liu; Weijia Zhou; Xiao Wang; Mark H Rummeli; Yu Zhang; Gianaurelio Cuniberti
Journal: Nanomicro Lett Date: 2021-06-14

7 in total

p-Type MoS2 and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect.

Review 1. A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices.

2. Highly Sensitive, Ultrafast, and Broadband Photo-Detecting Field-Effect Transistor with Transition-Metal Dichalcogenide van der Waals Heterostructures of MoTe2 and PdSe2.

3. High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors.

4. Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction.

5. UV-Visible Photodetector Based on I-type Heterostructure of ZnO-QDs/Monolayer MoS2.

6. Diverse Functionalities of Vertically Stacked Graphene/Single layer n-MoS2/SiO2/p-GaN Heterostructures.